IPT012N08N5ATMA1 - 80V 300A OptiMOS 5 N-Ch MOSFET | Infineon
MPN: IPT012N08N5ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.92 | $7.92 |
| 10 | $7.05 | $70.50 |
| 100 | $5.65 | $565.00 |
| 500 | $4.85 | $2,425.00 |
| 1,000 | $4.32 | $4,320.00 |
Drop-in alternatives for IPT012N08N5ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPT015N08N5ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IAUT300N08S5N011ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$5.4 / Unit
View Datasheet βIPT012N08N5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPT012N08N5ATMA1 |
| Technology | OptiMOS 5 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID, TC) | 300 A |
| Pulsed Drain Current (IDM) | 400 A |
| On-Resistance RDS(on) Max | 1.2 mOhm |
| Total Gate Charge QG | 208 nC |
| Gate-to-Drain Charge QGD | 178 nC |
| Power Dissipation (PD, TC) | 375 W |
| Package | PG-HSOF-8 (TOLL) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) |
| RoHS Status | Compliant |
| Qualification | JEDEC JESD47, JESD22, J-STD-020 (industrial) |
IPT012N08N5ATMA1 Pin Configuration
| Pin 1 | GATE β Gate drive input |
| Pin 2 | SOURCE β Source (Kelvin return recommended) |
| Pin 3 | SOURCE β Source (Kelvin return recommended) |
| Pin 4 | SOURCE β Source (Kelvin return recommended) |
| Pin 5 | SOURCE β Source (Kelvin return recommended) |
| Pin 6 | SOURCE β Source (Kelvin return recommended) |
| Pin 7 | SOURCE β Source (Kelvin return recommended) |
| Pin 8 | SOURCE β Source (Kelvin return recommended) |
| Pin TAB | DRAIN β Drain (top-side metal tab, also thermal pad) |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPT012N08N5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, High-Current ORing and Hot-Swap, E-Mobility Motor Drive Inverter, Battery Management Protection MOSFET, Industrial SMPS Primary-Side Switch, Solar Inverter DC-Side Switch.
48V Telecom Synchronous Rectification
The IPT012N08N5ATMA1 is optimized as the synchronous-rectifier (SR) MOSFET in 48V-input telecom DC-DC bricks and intermediate-bus converters. Its 1.2 mOhm maximum RDS(on) at 10 V VGS and 208 nC total gate charge place conduction and switching losses at the low end of the 80V OptiMOS 5 family. In a typical 1 kW full-bridge converter running at 200 kHz, two IPT012N08N5ATMA1 in parallel dissipate roughly 30-40 W combined at full load, allowing a single heatsink to cool the entire SR stage. The PG-HSOF-8 (TOLL) package's top-side metal tab provides a direct thermal path into the chassis cold plate, and the 80 V VDS rating leaves ample margin for 48 V nominal input plus transients up to 60 V. Compared to the prior OptiMOS 3 generation, the 44% reduction in output capacitance cuts dead-time losses and improves light-load efficiency.
Recommended
High-Current ORing and Hot-Swap
In redundant 48 V power-system ORing and hot-swap modules, the IPT012N08N5ATMA1 serves as the main pass element that connects a supply to a live bus while limiting inrush. Its 400 A pulsed drain current rating handles the initial C-dV/dt surge when charging discharged bulk capacitance, while the 1.2 mOhm steady-state RDS(on) keeps full-load conduction loss near 36 W at 300 A continuous. The 80 V VDS comfortably tolerates 48 V nominal plus transient spikes, and the 208 nC QG allows sub-microsecond turn-on when driven by a dedicated hot-swap controller. Designers should parallel two IPT012N08N5ATMA1 devices in high-availability systems to halve conduction loss and reduce junction temperature rise. The TOLL package's top-cooling tab enables the ORing MOSFET to share the same cold plate as downstream rectifiers.
Recommended
E-Mobility Motor Drive Inverter
Within e-mobility traction and auxiliary motor-drive inverters, the IPT012N08N5ATMA1 functions as a high-current low-side switch when the bus voltage stays within 80 V (e.g., 48 V mild-hybrid systems). Its 300 A TC rating and 375 W power dissipation support high-torque transient loads, while the 1.2 mOhm RDS(on) maximizes inverter efficiency and vehicle range. The OptiMOS 5 technology reduces switching losses versus OptiMOS 3 by approximately 44%, allowing PWM frequencies above 20 kHz without audible noise and without pushing junction temperature beyond the 175 C limit. The PG-HSOF-8 (TOLL) footprint allows PCB layouts co-populated with the automotive-grade IAUT-series counterpart (IAUT300N08S5N011ATMA1) for safety-critical variants. Ensure the gate driver is a reinforced-isolation type to handle the high dV/dt of the IGBT/SiC companion switches in the same inverter.
Recommended
Battery Management Protection MOSFET
In 48-72 V Li-ion battery management systems (BMS), the IPT012N08N5ATMA1 is used as the main disconnect and high-side protection MOSFET in the battery pack. Its 1.2 mOhm RDS(on) at the 100-300 A continuous discharge rating adds less than 100 mV of drop per cell-string, preserving usable capacity. The 400 A pulsed rating covers inrush from capacitive loads on the bus, and the 80 V VDS tolerates the full battery voltage plus transient spikes during fuse clearing events. The 208 nC QG enables the BMS controller to interrupt current within microseconds of detecting a fault. The TOLL package's top-cooling tab efficiently transfers I^2R losses to the battery enclosure cold plate. For functional-safety designs, pair the IPT012N08N5ATMA1 with the IAUT-series automotive-qualified equivalent on the safety-critical half of the pack.
Recommended
Industrial SMPS Primary-Side Switch
In high-power industrial SMPS designs with 48 VDC inputs and isolated outputs to 12 V or lower, the IPT012N08N5ATMA1 can serve as the primary-side switch in a half-bridge or full-bridge topology. Its 80 V VDS leaves margin for 48 V nominal plus reflected transient ringing, while the 1.2 mOhm RDS(on) and 208 nC QG maintain above 97% efficiency at 500 W output. The 300 A continuous rating allows a single device per switch position, eliminating the cost and complexity of paralleling. The PG-HSOF-8 (TOLL) package is rated for 375 W power dissipation, provided the top-side metal tab is pressed against a heatsink with thermal interface material. For higher-voltage buses, substitute the IPB200N25N3GATMA1 (250 V) without changing the TOLL footprint if your design uses the larger copper pad.
Recommended
Solar Inverter DC-Side Switch
In residential and small-commercial string solar inverters with maximum power-point voltages below 60 V, the IPT012N08N5ATMA1 acts as the high-side or low-side disconnect switch between the PV string and the boost converter. Its 80 V VDS rating handles 60 V open-circuit PV voltage plus transient spikes, while the 1.2 mOhm RDS(on) keeps conduction loss under 25 W at 150 A typical load. The OptiMOS 5 platform's low QGD (178 nC) reduces switching loss during the high-frequency boost stage, raising inverter CEC-weighted efficiency by 0.3-0.5% versus older generations. The TOLL package's top-cooling tab allows direct mounting to the inverter's aluminum chassis. For three-phase string inverters with higher bus voltages, escalate to the 100 V or 120 V OptiMOS 5 parts in the same footprint.
Recommended
Recommended Products Summary
Engineering reference data for IPT012N08N5ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT015N08N5ATMA1 | IAUT300N08S5N011ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same | TDSON-8 - different |
| VDS Max | 80 V | 80 V | 80 V | 80 V |
| Continuous Drain Current (TC) | 300 A | [DATA_NEEDED] | 300 A | 100 A |
| RDS(on) Max | 1.2 mOhm | 1.5 mOhm (+25%) | 1.1 mOhm (-8%) | 4.0 mOhm (+233%) |
| Total Gate Charge QG | 208 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 (automotive) | OptiMOS 5 |
| Automotive Qualified | No (industrial JEDEC) | No (industrial JEDEC) | Yes (AEC-Q101) | No (industrial JEDEC) |
Key Differentiators
- Lowest RDS(on) in Infineon 80V TOLL OptiMOS 5 family at the 300A rating (vs IPT015N08N5ATMA1)
- Industrial JEDEC qualification optimized for telecom and e-mobility (vs IAUT300N08S5N011ATMA1)
- PG-HSOF-8 (TOLL) top-side cooling enables compact high-power-density designs (vs BSC040N08NS5ATMA1 (TDSON-8))
Design Notes
Estimated: The PG-HSOF-8 (TOLL) package achieves its 375 W power dissipation rating only when the top-side metal tab is soldered to the PCB and thermally bonded to a heatsink with a thermal-interface material rated for at least 2 W/mK. Without a heatsink, junction-to-ambient thermal resistance rises above 50 K/W, limiting practical dissipation to roughly 2 W. Compute worst-case conduction loss as P_cond = I_DS^2 x R_DS(on) and verify junction temperature stays below 150 C for reliable long-term operation across the -40 to +85 C ambient industrial range.
Use a Kelvin-source layout that connects the gate-driver return directly to the source pad adjacent to the gate pin, separate from the high-current power-source path. This prevents gate-drive ringing caused by source-inductance voltage spikes during switching transients. The TOLL land pattern requires a copper pour of at least 200 mm^2 on the top layer for primary thermal spreading, with thermal vias to inner layers for additional heatsinking. Keep the gate-trace length under 10 mm to minimize parasitic gate-loop inductance.
Do not exceed 80 V VDS even transiently - avalanche energy beyond the datasheet E_AS rating will degrade the part. The IPT012N08N5ATMA1 is optimized for 10 V VGS drive; at 4.5 V VGS the R_DS(on) rises 2-3x and the device may not fully enhance at high current. Always place a 100 kohm gate-to-source pull-down resistor to prevent accidental turn-on during power-up of the gate driver. For parallel operation, use source-side ballast resistors (1-10 mOhm) to balance current sharing and avoid thermal runaway.
Route the high-current drain and source paths on wide copper pours (at least 2 oz thickness recommended for 300 A continuous). Keep the switching-node loop area (drain-source of the switching MOSFET plus the freewheeling diode path) to an absolute minimum to reduce EMI and voltage overshoot. The TOLL package's drain tab is on top of the package; the bottom-side drain connection is through the source pins, so the PCB copper area must carry the full load current without significant voltage drop.
Compliance Information
Industrial JEDEC qualification per JESD47, JESD22, J-STD-020. Not AEC-Q100/101 qualified - choose IAUT-series for automotive safety-critical applications.
