K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
N.º da peça: K4A8G085WC-BCPB ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $4.1 | $4,10 |
| 10 | $3.8 | $38,00 |
| 100 | $3.45 | $345,00 |
| 500 | $3.2 | $1.600,00 |
| 1.000 | $2.95 | $2.950,00 |
K4A8G085WC-BCPB Visão geral
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is the mainstream volatile main-memory technology for computing and embedded systems. In the memory hierarchy it sits above cache (SRAM) and below storage (NAND), providing high-bandwidth working memory for processors. DDR4 improved on DDR3 by lowering operating voltage to 1.2 V, raising bank-group parallelism, and adding features such as on-die termination, ZQ calibration, CRC and data masking, all of which this device supports.
Key features of the K4A8G085WC family include the 8 Gb density in a x8 organization, 2133 Mbps speed grade (DDR4-2133, PC4-17000 class), asynchronous reset and auto-precharge functions, dynamic on-die termination, and ZQ calibration. The 1.2 V core supply reduces system power versus DDR3, while the BGA package ensures reliable signal integrity at DDR4 speeds on standard 8-layer PCB stacks.
Architecturally, the device uses Samsung C-die class DDR4 process technology with bank groups and burst lengths of 8 (BC4/BL8), controlled through standard DDR4 command timing (ACT, READ, WRITE, PRECHARGE, REF) from a DDR4 memory controller. The x8 organization simplifies routing to a single chip-select load and suits designs needing byte-wide memory attachment such as embedded microprocessor units and FPGA memory controllers.
Typical applications include industrial controllers, networking equipment line cards, embedded computing modules (COM Express, SMARC), test and measurement instruments, and replacement/repair sourcing for legacy DDR4-2133 BOM lines where the original component is now EOL.
A key design consideration: DDR4-2133 requires careful length-matched routing, reference voltage (VDDQ = 1.2 V) plane integrity, and controller training of read/write leveling. Verify speed-bin compatibility of the -BCPB grade against your memory controller initialization tables before substitution.
This page adds value beyond the Samsung datasheet by consolidating distributor sourcing, verified drop-in alternatives, EOL migration notes, and practical DDR4 design guidance in one AI-citable reference.
Alternativas drop-in para K4A8G085WC-BCPB — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4A8G085WC-BCPB (mesmo formato e footprint) — diferindo em Package, Data Rate, Burst Length, Operating Temperature, Density.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4A8G085WC-BCRC
✅ Drop-In✓ Em estoque
$4.3 / unidade
Ver ficha técnica →K4A8G085WC-BCTD
✅ Drop-In✓ Em estoque
$50.85 / unidade
Ver ficha técnica →K4A8G085WC-BIWE
✅ Drop-In✓ Em estoque
$6.29 / unidade
Ver ficha técnica →K4A8G085WB-BCPB
✅ Drop-In✓ Em estoque
$13.7813 / unidade
Ver ficha técnica →K4A8G085WB-BCTD
✅ Drop-In✓ Em estoque
$7.5 / unidade
Ver ficha técnica →K4A8G085WC-BCPB Especificações
| Tipo de memória | DDR4 SDRAM |
| Density | 8 Gb |
| Organização da memória | 1G x 8 |
| Taxa de dados | 2133 Mbps |
| Tensão de alimentação | 1.2 V |
| Temperatura de operação | 0 C to +85 C |
| Encapsulamento | 78FBGA |
| Number of Terminals | 78 |
| Maximum Seated Height | 1.2 mm |
| Tipo de montagem | Surface Mount |
| Speed Grade | DDR4-2133 |
| Recursos | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
Guia de Configuração de Pinos do K4A8G085WC-BCPB 78fbga
Configuração de pinos para K4A8G085WC-BCPB (pacote 78fbga). A numeração dos pinos, funções e diagramas de conexão estão definidos no datasheet do fabricante. Consulte-o para o footprint exato e diretrizes de soldagem.
Nenhum dado detalhado de pinagem disponível para K4A8G085WC-BCPB.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
K4A8G085WC-BCPB é adequado para 6 aplicaçãos: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Test and Measurement Instruments, Replacement Sourcing and BOM Repair, FPGA Memory Attach.
Industrial Controllers
Industrial PLCs and motion controllers need dependable working memory with long sourcing lifetimes. The K4A8G085WC-BCPB provides 8 Gb of DDR4-2133 bandwidth (1G x 8) at 1.2 V, giving roughly 1 GB of main memory per device in a compact 78FBGA footprint. Its x8 organization simplifies byte-lane routing to industrial CPU modules, and features such as dynamic ODT and ZQ calibration hold signal integrity on longer, noisier board traces typical of factory automation hardware. Placed on a fly-by address bus with VTT termination and a 1.2 V rail, it delivers reliable DDR4-2133 operation; since the part is EOL, design teams should pair new controller boards with the documented WB-family drop-ins to protect future sourcing.
Recomendado
Embedded Computing Modules
COM Express, SMARC, and custom SOMs attach one or two DDR4 x8 DRAMs per byte lane. The K4A8G085WC-BCPB's 1G x 8 organization and 78FBGA package fit the dense memory islands of carrier-bound modules, while its 2133 Mbps rate matches standard SoC memory-controller speed bins. The 1.2 V supply aligns with module power budgets, and CRC plus data-mask functions simplify error-managed configurations in edge servers. Designers mount the device on length-matched 8-layer stacks and rely on controller read/write training to close timing at 2133 Mbps. Because the part is EOL, module vendors should qualify the K4A8G085WB-BCPB pin-compatible variant to keep the same PCB assembly across future builds.
Recomendado
Networking Equipment
Line cards, switch control planes, and small-cell processors use DDR4 for packet buffers and control-plane working memory. The K4A8G085WC-BCPB offers 8 Gb at DDR4-2133 with a 1.2 V rail, suiting merchant silicon reference designs that specify DDR4-2133 x8 UDIMM-equivalent components. Dynamic on-die termination and ZQ calibration keep the 2133 Mbps eye within mask across backplane-length trace runs, and asynchronous reset allows clean reinitialization after watchdog events. Engineers populate one device per x8 lane and validate with full memory stress tests. With EOL status confirmed, network OEMs should last-time-buy or move to the documented -BCRC/-BCTD drop-ins after timing re-validation.
Recomendado
Test and Measurement Instruments
Oscilloscopes, arbitrary waveform generators, and protocol analyzers stream deep capture data into DDR4. The K4A8G085WC-BCPB's 1 GB capacity and 2133 Mbps throughput per device give instrument FPGA front ends sufficient buffering bandwidth when banks are interleaved, while the x8 organization lets designers scale memory width one byte lane at a time. ZQ calibration maintains termination accuracy across the instrument's thermal envelope (0 to +85 C), and CRC-supported configurations raise data-capture confidence. Layout teams reference-plane-guard the memory fly-by bus to protect timing margin. Since this Samsung die is EOL, instrument makers should re-qualify the WB-family equivalents to preserve long-term serviceability of shipped products.
Recomendado
Replacement Sourcing and BOM Repair
Many deployed industrial and networking platforms were built on DDR4-2133 x8 DRAM and now face component obsolescence. The K4A8G085WC-BCPB serves repair depots and contract manufacturers replacing failed DRAM on legacy boards: matching the original 8Gb, 1G x 8, 78FBGA, 1.2 V configuration restores the board to spec without PCB or firmware changes. Buyer-side diligence should confirm date codes, verify 2133 speed-bin compliance with the board's SPD/controller table, and run full memory diagnostics after reflow. Stock reports indicate roughly 13,000 units remain across brokers, so long-term service programs should transition to the pin-compatible WB family documented here.
Recomendado
FPGA Memory Attach
Xilinx MIG and Intel EMIF controllers readily drive single-rank DDR4-2133 x8 devices, making the K4A8G085WC-BCPB a straightforward FPGA memory attach choice. One 78FBGA device occupies one chip-select with byte-wide DQ, keeping FPGA bank assignment simple; 8 Gb capacity suits video frame buffers, data acquisition FIFOs, and coprocessor workspaces. The 1.2 V VDDQ domain matches FPGA HR bank standards through proper level-compliant termination, and controller calibration (write leveling, read training) closes timing at 2133 Mbps on 8-layer boards. Designers should mirror the ballout in constraint files precisely and re-run training whenever substituting the EOL part with a WB or BCRC alternative.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4A8G085WC-BCPB — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4A8G085WC-BCRC | K4A8G085WC-BCTD | K4A8G085WC-BIWE | K4A8G085WB-BCPB |
|---|---|---|---|---|---|
| Package | 78FBGA | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Lifecycle Status | EOL | Active/broker stock | EOL (migration to BIWE documented) | Active (designated migration part) | Active/broker stock |
Principais diferenciais
- Lowest-cost DDR4-2133 speed bin in the 8Gb x8 family (vs K4A8G085WC-BCRC)
- Long-term sourcing continuity via pin-compatible B-die generation (vs K4A8G085WB-BCPB)
- Official Samsung-sanctioned migration target exists (vs K4A8G085WC-BCTD)
Notas de projeto
Route the DDR4-2133 interface with a fly-by command/address topology terminated to VTT, and length-match data groups per byte lane to within typical DDR4 board-level tolerances. Keep DQ/DQS stubs minimal, reference an unbroken ground plane under all memory traces, and use 40-ohm single-ended impedance. Samsung's DDR4 design guide and your memory controller vendor's layout checklist define exact length-matching windows; following both prevents 2130-2133 Mbps eye failures on 8-layer stacks.
Supply a tight 1.2 V rail (typically +/-3%) to VDD and VDDQ with local 0.1 uF decoupling per power ball group plus bulk capacitance near the 78FBGA. Plan for a DDR termination regulator (VTT/VTTREF) on the command/address bus per the JEDEC DDR4 architecture. Estimated: dynamic power scales with data rate, so at 2133 Mbps a single 8Gb device draws on the order of hundreds of milliamps from the 1.2 V rail under sustained traffic - size the VRM with margin for refresh bursts.
The -BCPB suffix encodes the speed bin, package style, and temperature code; do not assume interchangeability purely from the K4A8G085WC prefix. Substituting a -BCRC or -BCTD is electrically pin-compatible but changes AC timing and operating range, so update the controller's SPD/timing table and re-run memory training and full stress tests after any swap. Also confirm that EOL broker stock has verifiable date codes before accepting quantity shipments.
Informações de conformidade
Compliance data not stated in provided sources. Samsung DDR4 products are generally RoHS compliant, but this must be confirmed against the official Samsung product page before inclusion in compliance-sensitive BOMs.
