K4A8G085WC vs K4A8G085WC-BCTD Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC sa pamamagitan ng Samsung Electronics at K4A8G085WC-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K4A8G085WC K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC ✓ Nakahanda
Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro K4A8G085WC K4A8G085WC-BCTD
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Huling Pagbili
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organisasyon 1G x 8 1G x 8
Speed 2666 Mbps/pin (DDR4-2666) —
Volte ng Pagbibigay 1.2 V —
Supply Voltage Range 1.14 V to 1.26 V —
Clock Frequency 1333 MHz (1333.333 GHz nominal, per web data) —
Operating Temperature (K4A8G085WC-BITD) -40 C to +95 C —
Operating Temperature (K4A8G085WC-BCTD) 0 C to +95 C —
Packhaging 78-ball FBGA (78FBGA) 78-ball FBGA (78FBGA)
Uri ng Pagpapasok Surface Mount Surface Mount
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
CRC Function Yes Yes
ZQ Calibration Yes Yes
Dynamic On-Chip Termination (ODT) Yes —
Data Mask (DM) Yes —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Rate ng Data — 2666 Mbps (PC4-2133)
Supply Voltage (VDD/VDDQ) — 1.2 V (1.14 V to 1.26 V)
Ball Pitch — 0.8 mm
Temperature na Operasyon — 0C to +95C
Standard Operating Temp Range — 0C to +85C
Burst Length — 8 (chop 4)
Dynamic ODT — Yes
Data Mask — Yes
Uri ng Interface — Synchronous, parallel

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