K4A8G085WC vs K4A8G085WC-BCTD 比較
詳細並排比較 K4A8G085WC 由 Samsung Electronics 與 K4A8G085WC-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ 啟用中Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最後購買機會規格比較
| 參數 | K4A8G085WC | K4A8G085WC-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 最後購買 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| 供應電壓 | 1.2 V | — |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| 封裝 | 78-ball FBGA (78FBGA) | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 資料速率 | — | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| 工作溫度 | — | 0C to +95C |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| 介面類型 | — | Synchronous, parallel |