M29F160FB55N3F2 vs M29F800FB55N3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F160FB55N3F2 sa pamamagitan ng Micron Technology at M29F800FB55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F160FB55N3F2 | M29F800FB55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | Parallel NOR Flash | — |
| Density | 16777 kbits (16 Mbit) | — |
| Organisasyon | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 1M x 8 / 512K x 16 |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Volte ng Pagbibigay | 5 V | 5 V |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block |
| Temperature na Operasyon | -40 to +125 C | -40C to +125C |
| Interface | Parallel | — |
| Package Type | 48-TSOP | 48-pin TSOP1 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | Embedded byte/word program algorithms |
| Block Protection | Hardware boot block protection | — |
| Tindminan RoHS | Compliant (lead-free) | Compliant (lead-free terminations) |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Uri ng Interface | — | Parallel NOR |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |