NT5CC256M16CP-DIB1 vs K4A8G165WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16CP-DIB1 sa pamamagitan ng Nanya Technology at K4A8G165WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16CP-DIB1 - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CP-DIB1 ✓ NakahandaSamsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16CP-DIB1 | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | 8 Gb |
| Organisasyon | 256M x 16 | 512M x 16 |
| Volte ng Pagbibigay | 1.35V | — |
| Rate ng Data | 1600Mbps (DDR3L-1600) | 2133 Mbps |
| Packhaging | TFBGA-96, 9x13mm, 0.8mm pitch | 96FBGA (TFBGA) |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 11 | — |
| Write Latency (CWL) | 8 | — |
| tRCD/tRP | 11 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| Temperature na Operasyon | 0C to +95C (Tcase) | 0C to +85C |
| RoHS | Compliant | — |
| Wala sa Halogen | Yes | — |
| Lead Free | Yes | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Uri ng Pagpapasok | — | Surface Mount |
| Interface | — | DDR4 (synchronous, double data rate) |
| Bank Groups | — | DDR4 bank-group architecture |
| Tindminan RoHS | — | Compliant (per Lisleapex listing) |
| Refresh | — | [DATA_NEEDED: refresh specification] |