NT5CC256M16CP-DIB1 vs K4A8G165WB-BCPB 比較
詳細並排比較 NT5CC256M16CP-DIB1 由 Nanya Technology 與 K4A8G165WB-BCPB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5CC256M16CP-DIB1 | K4A8G165WB-BCPB |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | 8 Gb |
| 組織 | 256M x 16 | 512M x 16 |
| 供應電壓 | 1.35V | — |
| 資料速率 | 1600Mbps (DDR3L-1600) | 2133 Mbps |
| 封裝 | TFBGA-96, 9x13mm, 0.8mm pitch | 96FBGA (TFBGA) |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 11 | — |
| Write Latency (CWL) | 8 | — |
| tRCD/tRP | 11 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| 工作溫度 | 0C to +95C (Tcase) | 0C to +85C |
| RoHS | Compliant | — |
| 無鹵素 | Yes | — |
| Lead Free | Yes | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| 安裝類型 | — | Surface Mount |
| 介面 | — | DDR4 (synchronous, double data rate) |
| Bank Groups | — | DDR4 bank-group architecture |
| RoHS 狀態 | — | Compliant (per Lisleapex listing) |
| Refresh | — | [DATA_NEEDED: refresh specification] |