W989D6DBGX6I-TR vs W989D6DBGX6I Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng W989D6DBGX6I-TR sa pamamagitan ng Winbond at W989D6DBGX6I sa pamamagitan ng Winbond. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro W989D6DBGX6I-TR W989D6DBGX6I
Brand Winbond Winbond
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory Mobile LPSDR SDR SDRAM (Volatile DRAM) Mobile LPSDR SDRAM
Density 512 Mbit —
Organisasyon 32M x 16 (16-bit data bus) 32M words x 16 bit
Maksimum na Taktiko ng Oras 166 MHz 166 MHz
Clock Access Time 5 ns —
Supply Voltage (VDD/VDDQ) 1.8 V (typical); 1.7 V to 1.95 V range —
Number of Internal Banks 4 —
CAS Latency (CL) 2 / 3 selectable via MRS —
Burst Length 1, 2, 4, 8, full page 1, 2, 4, 8, Full Page
Refresh Window 1024 cycles / 16 ms —
Temperature na Operasyon -40C to +85C (Industrial) -40C to +85C (Industrial)
Packhaging 54-ball VFBGA, 8 mm x 9 mm 54-ball VFBGA (8 mm x 9 mm)
Process Technology 46 nm 46 nm CMOS
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Option Tape & Reel (-TR suffix) —
Low-Power Modes Partial-Array Self-Refresh (PASR), Deep Power-Down (DPD) —
Tindminan RoHS Compliant Compliant
Level ng MSL 3 (168 hours) 3
Lead-Free Yes —
Memory Density — 512 Mbit (32M x 16)
Width ng Data Bus — 16 bit
Access Time — 5 ns
Supply Voltage VDD — 1.8 V (typ)
Uri ng Interface — Parallel, LVCMOS
Number of Banks — 4
Latensya ng CAS — Programmable 2 or 3
Self-Refresh — Yes (with PASR)
Deep Power-Down — Yes
Ball Pitch — 0.8 mm

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