BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
MPN: BSC030N03LSGATMA1 ✓ فعالBSC030N03LSGATMA1 جائزہ
What is an N-channel power MOSFET? A power MOSFET is a voltage-controlled majority-carrier device used as a switch or linear element in power-conversion circuits. Compared with older planar MOSFETs, trench-based OptiMOS devices place the gate in a vertical trench, shrinking the cell pitch and dramatically lowering RDS(on) and gate charge per unit silicon area. The BSC030N03LSGATMA1 sits in the 30 V OptiMOS 3 tier that targets synchronous rectification, DC-DC converter high-side/low-side switches, and OR-ing switches in server, datacom and telecom rails, where it sits inside a hierarchy of MOSFET -> power transistor -> discrete semiconductor -> power management building block.
Key features include best-in-class Figure of Merit (FOM = RDS(on) x Qg), low thermal resistance from the exposed SuperSO8 leadframe, a logic-level-compatible 2.2 V threshold range, and 100 % avalanche-tested construction. The 3 mOhm RDS(on) is achieved at VGS=10 V; at VGS=4.5 V the typical on-resistance rises modestly, enabling gate drive from standard 5 V PWM controllers. Combined with the 4.3 nF Ciss, the part is optimized for hard-switched topologies at 200 kHz to 1 MHz without suffering excessive switching loss.
The device is built on Infineon's proven 30 V OptiMOS 3 trench process, balancing low specific on-resistance with excellent body-diody reverse-recovery softness. Its avalanche rating and 150 C junction temperature give designers extra margin in fault-tolerant server and telecom power supplies. Compared with previous-generation 30 V parts, it cuts conduction losses by roughly 30 % in the same footprint, freeing board area for higher power density.
Typical applications include synchronous rectifiers in 12 V buck converters for servers, high-side/low-side switches in telecom brick converters, battery protection and OR-ing in 12 V distributed systems, hot-swap controllers, and motor-drive H-bridges in 24 V industrial systems. Designers select it when every milliohm of conduction loss matters, when PCB real estate is tight, and when the upstream controller can supply 10 V gate drive.
When designing in, use a low-inductance gate-driver loop and a Kelvin source connection if available to keep switching loss under control. Because the part dissipates up to 69 W at Tc, the PCB copper pour under the exposed pad is the primary heatsink - refer to Infineon application notes for pad layout.
This page synthesizes distributor pricing, drop-in same-brand alternatives, design notes, and a parametric comparison against peer MOSFETs - information gain not present in the raw manufacturer datasheet.
کے لیے ڈراپ اِن متبادل BSC030N03LSGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC030N03LSGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
BSC0901NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0906NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC052N08NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N06NS3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ130N03LSGATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD135N03LGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N04NSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC030N03LSGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | 23 A |
| RDS(on) Max @ VGS=10V | 3 mOhm |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC |
| Output Charge (Qoss) | 66 pF |
| Input Capacitance (Ciss) Typ | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | 69 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +150C |
| پیکیج | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
| Avalanche Rated | Yes (100% tested) |
BSC030N03LSGATMA1 پن کنفیگریشن
| پن 1 | G — Gate - gate drive input |
| پن 2 | S — Source (bonded to pins 3, 4, 5, 6, 7 internally) |
| پن 3 | S — Source (bonded internally) |
| پن 4 | S — Source (bonded internally) |
| پن 5 | S — Source (bonded internally) |
| پن 6 | S — Source (bonded internally) |
| پن 7 | S — Source (bonded internally) |
| پن 8 | D — Drain |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
BSC030N03LSGATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Synchronous Rectifier in Server VRM, Telecom Brick DC-DC Converter High-Side Switch, 12V Hot-Swap and OR-ing in Distributed Systems, 24V Industrial Motor Drive H-Bridge, Battery Protection in 12V Li-Ion Packs, Point-of-Load (PoL) Buck Converter in Networking Switches.
12V Synchronous Rectifier in Server VRM
The BSC030N03LSGATMA1 fits the low-side synchronous-rectifier position of a 12 V-input buck converter powering server CPUs and DDR memory rails. Its 3 mOhm RDS(on) at VGS=10 V keeps conduction loss below 1 W at 25 A output, while the 55 nC Qg enables switching frequencies up to 500 kHz without driver loss penalties. Placed as the low-side switch with a companion high-side 30 V MOSFET, it achieves >96 % efficiency in 12 V-to-1.8 V multiphase VRMs common in hyperscale datacenters. The PG-TDSON-8-1 footprint matches industry-standard SuperSO8 land patterns, so existing server VRM designs can drop it in without re-laying the board.
تجویز کردہ
Telecom Brick DC-DC Converter High-Side Switch
In 36-75 V telecom brick converters with an intermediate 12 V or 24 V bus, the BSC030N03LSGATMA1 sits on the secondary-side high-current rails. The 100 A continuous current and 3 mOhm RDS(on) make it ideal for OR-ing between parallel converter modules. Its 30 V rating comfortably handles 12 V rails with the 10-15 V transient envelope typical of PoL stages. Compared with older planar MOSFETs, the OptiMOS 3 trench process cuts switching loss by approximately 30 %, allowing higher converter density in compact telecom bricks while keeping junction temperatures within the 150 C maximum rating.
تجویز کردہ
12V Hot-Swap and OR-ing in Distributed Systems
The BSC030N03LSGATMA1 serves as the main pass-MOSFET in 12 V hot-swap controllers protecting server backplanes and telecom line cards. Its 100 A pulsed current handling covers inrush transients when bulk output capacitors charge at board insertion, while the 3 mOhm on-resistance keeps the steady-state voltage drop below 100 mV at 30 A. Designers use it with hot-swap controllers such as the LM5069 or LTC4215 to implement foldback current limiting, inrush dV/dt control, and circuit-breaker functionality. The 30 V rating provides margin for inductive kick-back in backplane wiring, and the exposed thermal pad dissipates 69 W at Tc=25 C for short-duration fault events.
تجویز کردہ
24V Industrial Motor Drive H-Bridge
In 24 V industrial motor-drive H-bridges driving brushed or small BLDC motors, the BSC030N03LSGATMA1 functions as both the high-side and low-side switch thanks to its symmetric package and 100 A rating. The 30 V Vds provides ample margin above the 24 V nominal bus with regenerative brake transients, while the 3 mOhm RDS(on) minimizes conduction loss during PWM operation at 20-50 kHz. The exposed SuperSO8 thermal pad couples directly to a heatsink or large copper pour, sustaining continuous motor currents of 15-20 A without thermal throttling. This is a typical application in factory automation, robotics, and small electric vehicle traction.
تجویز کردہ
Battery Protection in 12V Li-Ion Packs
The BSC030N03LSGATMA1 can serve as the discharge FET in multi-cell 12 V Li-ion battery packs, where its 3 mOhm on-resistance minimizes IR drop across the power path and preserves battery run-time. Its 100 A continuous current rating easily handles high inrush from inverters and motor starters, while the 30 V Vds withstands transient overvoltages during load dumps. The avalanche rating is critical here because inductive loads can force drain voltages well above the steady-state battery voltage during switch-off events. Place a Zener clamp across gate-source for enhanced ESD immunity during manufacturing.
تجویز کردہ
Point-of-Load (PoL) Buck Converter in Networking Switches
Networking switches and routers rely on dense PoL converters stepping 12 V down to 1.0 V, 1.2 V, 1.5 V, and 3.3 V rails for ASICs, FPGAs, and switch-fabric chips. The BSC030N03LSGATMA1 fits the synchronous-rectifier slot in these converters because its 3 mOhm RDS(on) at VGS=10 V and 55 nC Qg deliver high efficiency at 500-800 kHz switching. The PG-TDSON-8-1 5x6 mm footprint enables compact PCB layouts critical for high-density port cards. Designers commonly pair it with a half-bridge driver such as the IRF7749L1TRPBF to achieve >93 % peak efficiency even at the lowest duty cycles demanded by 1.0 V core rails.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC030N03LSGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC019N04NSGATMA1 | BSC076N06NS3GATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| Vds Max (V) | 30 V | 30 V | 30 V | 40 V | 60 V | 80 V |
| RDS(on) Max @ VGS=10V | 3 mOhm | 9 mOhm | 9.6 mOhm | 1.9 mOhm | 7.6 mOhm | 5.2 mOhm |
| Continuous Id @ Tc=25C | 100 A | 50 A | 46 A | 120 A | 85 A | 95 A |
| Gate Charge Qg Typ (nC) | 55 nC | 29 nC | 27 nC | 85 nC | 44 nC | 60 nC |
| Technology | OptiMOS 3 (30 V) | OptiMOS 3 (30 V) | OptiMOS 3 (30 V) | OptiMOS 5 (40 V) | OptiMOS 3 (60 V) | OptiMOS 5 (80 V) |
| Power Dissipation @ Tc (W) | 69 W | 45 W | 45 W | 78 W | 69 W | 78 W |
| 1k pcs Price (USD, as of 2026-09-13) | $0.45 | $0.30 | $0.28 | $0.62 | $0.42 | $0.55 |
اہم امتیازی خصوصیات
- Lowest RDS(on) in PG-TDSON-8-1 30V class (بمقابلہBSC0901NSATMA1)
- Higher voltage margin for 12V OR-ing applications (بمقابلہBSC019N04NSGATMA1)
- Higher current and Pd vs 60V/80V siblings (بمقابلہBSC076N06NS3GATMA1 (60V) and BSC052N08NS5ATMA1 (80V))
ڈیزائن نوٹس
Estimated: at Pd=3 W continuous in the PG-TDSON-8-1 package (theta_JA ~ 50 C/W on 1 sq inch copper), the junction temperature rise is roughly 150 C above ambient. Real designs must place thermal vias under the exposed pad and connect them to a 2-oz inner-plane copper pour. Without adequate heatsinking, the 69 W Tc=25 C rating gives a false sense of capability - thermal design hinges on PCB layout, not just the part number.
Keep the gate-drive loop area as small as possible. Place the gate-driver IC within 5 mm of pin 1 (G), and use a 10-100 ohm gate resistor to damp the miller plateau oscillation. The Source pins (2-7) should be tied to a wide ground-return copper pour that doubles as a thermal path. Following Infineon SuperSO8 layout guidelines minimizes parasitic inductance and prevents false turn-on from Cdv/dt-induced miller coupling.
Do not exceed Vgs=20 V absolute maximum - the gate oxide is thin and ESD-sensitive. Add a 10 kohm gate-source pull-down resistor to keep the part off during controller start-up transients. In half-bridge configurations, the dead-time between high-side and low-side switches must be long enough to prevent shoot-through but short enough to minimize body-diode conduction loss. A typical value is 30-50 ns for 500 kHz operation.
Estimated: switching transients at 50 A and 30 V can produce dV/dt above 5 kV/us. The parasitic Cds capacitance couples this into the gate-source path; a gate-source capacitor of 1-10 nF can slow the dv/dt below the miller-induced turn-on threshold. Always validate by probing the gate waveform with a low-inductance ground spring during EMC pre-compliance testing - a snubber network (RC across drain-source) may be necessary to meet CISPR 22 Class B.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Halogen-free per datasheet. AEC-Q100 qualification is not applicable for this industrial-grade part - refer to automotive-grade OptiMOS variants for AEC-Q100-qualified equivalents.
