K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN: K4B4G1646D-BCH90 ✓ Hoạt độngK4B4G1646D-BCH90 Tóm tắt
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
Bộ thay thế dễ dàng lắp đặt cho K4B4G1646D-BCH90 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4B4G1646D-BCH90 (cùng hình factor và footprint) — khác nhau ở Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
K4B4G1646D-BHMA
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BYK0
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BCMA
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646D-BFMA
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646E-BMMA
✅ Drop-In✗ Hết hàng
$16.0781 / Đơn vị
Xem tài liệu →MT41K256M16HA-125
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$6.3636 / Đơn vị
Xem tài liệu →H5TC4G63AFR
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646D-BCH90 Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4Gb |
| Tổ chức | 32M x 16 |
| Number of Banks | 8 |
| Tốc độ dữ liệu | 2133 Mb/s per pin |
| Điện áp cung cấp | 1.35V (1.283V to 1.45V) |
| Hộp | 96-ball FBGA |
| Nhiệt độ hoạt động | 0°C to +85°C |
| Latency CAS | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| Đông trùng haogen | Yes |
Cấu hình chân K4B4G1646D-BCH90
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDD — Power supply |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDDQ — I/O power supply |
| Chân C2 | VSSQ — I/O ground |
| Chân C3 | VDDQ — I/O power supply |
| Chân C4 | VSSQ — I/O ground |
| Chân C5 | VDDQ — I/O power supply |
| Chân C6 | VSSQ — I/O ground |
| Chân C7 | VDDQ — I/O power supply |
| Chân C8 | VSSQ — I/O ground |
| Chân C9 | VDDQ — I/O power supply |
| Chân C10 | VSSQ — I/O ground |
| Chân C11 | VDDQ — I/O power supply |
| Chân C12 | VSSQ — I/O ground |
| Chân D1 | A0 — Address input 0 |
| Chân D2 | A1 — Address input 1 |
| Chân D3 | A2 — Address input 2 |
| Chân D4 | A3 — Address input 3 |
| Chân D5 | A4 — Address input 4 |
| Chân D6 | A5 — Address input 5 |
| Chân D7 | A6 — Address input 6 |
| Chân D8 | A7 — Address input 7 |
| Chân D9 | A8 — Address input 8 |
| Chân D10 | A9 — Address input 9 |
| Chân D11 | A10/AP — Address input 10 / auto precharge |
| Chân D12 | A11 — Address input 11 |
| Chân E1 | A12 — Address input 12 |
| Chân E2 | A13 — Address input 13 |
| Chân E3 | A14 — Address input 14 |
| Chân E4 | BA0 — Bank address 0 |
| Chân E5 | BA1 — Bank address 1 |
| Chân E6 | BA2 — Bank address 2 |
| Chân E7 | RAS# — Row address strobe |
| Chân E8 | CAS# — Column address strobe |
| Chân E9 | WE# — Write enable |
| Chân E10 | CS# — Chip select |
| Chân E11 | CKE — Clock enable |
| Chân E12 | ODT — On-die termination |
| Chân F1 | CK — Clock |
| Chân F2 | CK# — Complementary clock |
| Chân F3 | VDD — Power supply |
| Chân F4 | VSS — Ground |
| Chân F5 | VDD — Power supply |
| Chân F6 | VSS — Ground |
| Chân F7 | VDD — Power supply |
| Chân F8 | VSS — Ground |
| Chân F9 | VDD — Power supply |
| Chân F10 | VSS — Ground |
| Chân F11 | VDD — Power supply |
| Chân F12 | VSS — Ground |
| Chân G1 | DM0 — Data mask 0 |
| Chân G2 | DM1 — Data mask 1 |
| Chân G3 | VSS — Ground |
| Chân G4 | VDD — Power supply |
| Chân G5 | VSS — Ground |
| Chân G6 | VDD — Power supply |
| Chân G7 | VSS — Ground |
| Chân G8 | VDD — Power supply |
| Chân G9 | VSS — Ground |
| Chân G10 | VDD — Power supply |
| Chân G11 | VSS — Ground |
| Chân G12 | VDD — Power supply |
| Chân H1 | ZQ — Calibration reference |
| Chân H2 | VSS — Ground |
| Chân H3 | VDD — Power supply |
| Chân H4 | VSS — Ground |
| Chân H5 | VDD — Power supply |
| Chân H6 | VSS — Ground |
| Chân H7 | VDD — Power supply |
| Chân H8 | VSS — Ground |
| Chân H9 | VDD — Power supply |
| Chân H10 | VSS — Ground |
| Chân H11 | VDD — Power supply |
| Chân H12 | VSS — Ground |
| Chân J1 | NC — No connect |
| Chân J2 | NC — No connect |
| Chân J3 | NC — No connect |
| Chân J4 | NC — No connect |
| Chân J5 | NC — No connect |
| Chân J6 | NC — No connect |
| Chân J7 | NC — No connect |
| Chân J8 | NC — No connect |
| Chân J9 | NC — No connect |
| Chân J10 | NC — No connect |
| Chân J11 | NC — No connect |
| Chân J12 | NC — No connect |
Ứng dụng tiêu biểu
K4B4G1646D-BCH90 phù hợp cho 6 Áp dụngs: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
Được đề xuất
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
Được đề xuất
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
Được đề xuất
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
Được đề xuất
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
Được đề xuất
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4B4G1646D-BCH90 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Low voltage operation at 1.35V (vsMT41K256M16HA-125)
- High data rate of 2133Mb/s (vsMT41K256M16HA-125)
- D-die process technology (vsK4B4G1646E-BMMA)
Ghi chú thiết kế
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
Thông tin tuân thủ
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
