K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646D-BHMA ✓ Hoạt độngK4B4G1646D-BHMA Tóm tắt
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 1866 Mbps data rate, and 1.35V operation. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto refresh and self refresh modes, and is compatible with JEDEC DDR3L standards. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BHMA uses a D-die process, which offers improved performance and power characteristics compared to earlier dies. It supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for signal integrity. The device operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial applications.
Typical applications include personal computing devices, mobile phones, tablets, digital cameras, printers, networking equipment, industrial machinery, medical devices, automotive electronics, and solid-state drives. Its low voltage and high density make it ideal for power-sensitive portable devices and high-performance computing platforms.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. Also, verify the timing parameters for your specific application, as DDR3L timing is critical for reliable operation.
Bộ thay thế dễ dàng lắp đặt cho K4B4G1646D-BHMA — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4B4G1646D-BHMA (cùng hình factor và footprint) — khác nhau ở Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
K4B4G1646E-BMK0
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BMK0
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BPH90
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BFMA
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646E-BYMA
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →MT41K256M16HA-125
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$6.3636 / Đơn vị
Xem tài liệu →H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$3.9773 / Đơn vị
Xem tài liệu →IS43TR16256AL-125KBL
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BHMA Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4 Gb |
| Tổ chức | 256M x 16 |
| Tốc độ dữ liệu | 1866 Mbps |
| Điện áp cung cấp | 1.35 V (1.283 V to 1.45 V) |
| Hộp | 96-ball FBGA |
| Nhiệt độ hoạt động | -40°C to +95°C (TC) |
| Latency CAS | 13 (at 1866 Mbps) |
| Burst Length | 8 and 4 |
| Number of Terminals | 96 |
| Lead-Free | Yes |
| Đông trùng haogen | Yes |
| RoHS Compliant | Yes |
| Die Version | D-die |
| Refresh Mode | Auto and Self Refresh |
Cấu hình chân K4B4G1646D-BHMA
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDD — Power supply |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDDQ — DQ power supply |
| Chân C2 | VSSQ — DQ ground |
| Chân C3 | VDDQ — DQ power supply |
| Chân C4 | VSSQ — DQ ground |
| Chân C5 | VDDQ — DQ power supply |
| Chân C6 | VSSQ — DQ ground |
| Chân C7 | VDDQ — DQ power supply |
| Chân C8 | VSSQ — DQ ground |
| Chân C9 | VDDQ — DQ power supply |
| Chân C10 | VSSQ — DQ ground |
| Chân C11 | VDDQ — DQ power supply |
| Chân C12 | VSSQ — DQ ground |
| Chân D1 | A0 — Address input 0 |
| Chân D2 | A1 — Address input 1 |
| Chân D3 | A2 — Address input 2 |
| Chân D4 | A3 — Address input 3 |
| Chân D5 | A4 — Address input 4 |
| Chân D6 | A5 — Address input 5 |
| Chân D7 | A6 — Address input 6 |
| Chân D8 | A7 — Address input 7 |
| Chân D9 | A8 — Address input 8 |
| Chân D10 | A9 — Address input 9 |
| Chân D11 | A10/AP — Address input 10 / Auto-precharge |
| Chân D12 | A11 — Address input 11 |
| Chân E1 | A12 — Address input 12 |
| Chân E2 | A13 — Address input 13 |
| Chân E3 | A14 — Address input 14 |
| Chân E4 | BA0 — Bank address 0 |
| Chân E5 | BA1 — Bank address 1 |
| Chân E6 | BA2 — Bank address 2 |
| Chân E7 | RAS# — Row address strobe |
| Chân E8 | CAS# — Column address strobe |
| Chân E9 | WE# — Write enable |
| Chân E10 | CS# — Chip select |
| Chân E11 | CKE — Clock enable |
| Chân E12 | ODT — On-die termination |
| Chân F1 | CK — Clock positive |
| Chân F2 | CK# — Clock negative |
| Chân F3 | VDD — Power supply |
| Chân F4 | VSS — Ground |
| Chân F5 | VDD — Power supply |
| Chân F6 | VSS — Ground |
| Chân F7 | VDD — Power supply |
| Chân F8 | VSS — Ground |
| Chân F9 | VDD — Power supply |
| Chân F10 | VSS — Ground |
| Chân F11 | VDD — Power supply |
| Chân F12 | VSS — Ground |
| Chân G1 | DM0 — Data mask 0 |
| Chân G2 | DM1 — Data mask 1 |
| Chân G3 | DQS0 — Data strobe 0 |
| Chân G4 | DQS0# — Data strobe 0 complement |
| Chân G5 | DQS1 — Data strobe 1 |
| Chân G6 | DQS1# — Data strobe 1 complement |
| Chân G7 | DQS2 — Data strobe 2 |
| Chân G8 | DQS2# — Data strobe 2 complement |
| Chân G9 | DQS3 — Data strobe 3 |
| Chân G10 | DQS3# — Data strobe 3 complement |
| Chân G11 | VDD — Power supply |
| Chân G12 | VSS — Ground |
| Chân H1 | VSS — Ground |
| Chân H2 | VDD — Power supply |
| Chân H3 | VSS — Ground |
| Chân H4 | VDD — Power supply |
| Chân H5 | VSS — Ground |
| Chân H6 | VDD — Power supply |
| Chân H7 | VSS — Ground |
| Chân H8 | VDD — Power supply |
| Chân H9 | VSS — Ground |
| Chân H10 | VDD — Power supply |
| Chân H11 | VSS — Ground |
| Chân H12 | VDD — Power supply |
Ứng dụng tiêu biểu
K4B4G1646D-BHMA phù hợp cho 6 Áp dụngs: Embedded Systems, Networking Equipment, Mobile Devices, Industrial Machinery, Medical Devices, Automotive Electronics.
Embedded Systems
The K4B4G1646D-BHMA is ideal for embedded systems requiring high-density, low-power memory. Its 4Gb density and 1.35V operation reduce power consumption, making it suitable for industrial controllers, IoT gateways, and single-board computers. The 1866 Mbps data rate ensures fast data processing, while the 96FBGA package fits compact PCB designs. According to Samsung, it is designed for high-density memory applications in embedded systems.
Được đề xuất
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4B4G1646D-BHMA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, and the 1.35V operation reduces power in always-on network devices. The 96FBGA package allows for dense memory arrays on network line cards. According to Samsung, it is suitable for networking equipment.
Được đề xuất
Mobile Devices
The K4B4G1646D-BHMA is well-suited for mobile devices like smartphones and tablets due to its low 1.35V operation, which extends battery life. The 4Gb density provides ample memory for multitasking and multimedia applications. The 1866 Mbps data rate ensures smooth performance for apps and games. Its compact 96FBGA package is ideal for space-constrained mobile PCBs. According to Samsung, it is used in mobile phones and tablets.
Được đề xuất
Industrial Machinery
The K4B4G1646D-BHMA operates over -40°C to +95°C, making it suitable for industrial machinery that experiences extreme temperatures. Its high density and 1866 Mbps data rate support real-time control and data logging. The 1.35V operation reduces power in industrial systems. The 96FBGA package provides reliable solder joints for harsh environments. According to Samsung, it is used in industrial machinery.
Được đề xuất
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BHMA provides reliable, high-density memory for data acquisition and processing. Its low 1.35V operation is critical for battery-powered portable medical devices. The 1866 Mbps data rate supports real-time signal processing. The 96FBGA package is compact for medical device PCBs. According to Samsung, it is used in medical devices.
Được đề xuất
Automotive Electronics
The K4B4G1646D-BHMA is suitable for automotive electronics such as infotainment systems and ADAS, where high-density memory and low power are essential. Its wide temperature range (-40°C to +95°C) meets automotive requirements. The 1866 Mbps data rate supports high-bandwidth applications like navigation and camera processing. The 96FBGA package is robust for automotive environments. According to Samsung, it is used in automotive electronics.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4B4G1646D-BHMA — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4B4G1646E-BMK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Bảo phân biệt quan trọng
- D-die process for improved performance (vsK4B4G1646E-BMK0)
- Low voltage operation at 1.35V (vsMT41K256M16HA-125)
- Wide temperature range (vsIS43TR16256AL-125KBL)
Ghi chú thiết kế
For reliable operation at 1866 Mbps, follow the PCB layout guidelines in the Samsung datasheet. Ensure proper impedance matching for DQ, DQS, and address/control lines. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within 50 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins to minimize power supply noise.
The K4B4G1646D-BHMA operates at 1.35V, which is lower than standard DDR3 (1.5V). Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. According to the datasheet, the supply voltage range is 1.283V to 1.45V. Monitor the power supply for droop during high-speed switching.
The K4B4G1646D-BHMA operates over -40°C to +95°C. For high-density memory arrays, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96FBGA package has a thermal resistance that depends on PCB copper area. Use thermal vias under the package to improve heat dissipation. According to Samsung, the device is suitable for industrial temperature ranges.
Thông tin tuân thủ
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory ICs.
