1EDN7136UXTSA1 vs 2ED21064S06JXUMA1 比較

詳細並排比較 1EDN7136UXTSA1 由 Infineon 與 2ED21064S06JXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 啟用中

規格比較

參數 1EDN7136UXTSA1 2ED21064S06JXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 High-side / Low-side gate driver IC High-Side and Low-Side Gate Driver
Driven Device Type GaN HEMT, N-channel MOSFET —
輸出數量 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
工作溫度範圍 -40 C to +150 C —
封裝 TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-14 (14-pin SOIC)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant ROHS3 Compliant
Lead-Free Yes —
無鹵素 Yes (per Infineon product family convention) —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Configuration — Half-Bridge (2 outputs, non-inverting)
拓撲 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
工作溫度 — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

資料表與資源

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