IGBTs
Products (65)
FGA25N120ANTD - 1200V 25A NPT Trench IGBT | onsemi (Fairchild)
The onsemi (formerly Fairchild Semiconductor) FGA25N120ANTD is a 1200 V, 25 A NPT (Non-Punch-Through) Trench IGBT housed in a TO-247-3 package, designed for high-voltage power-switching applications. It combines the high-input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor, supporting continuous collector current up to 25 A at TC = 100 C and pulsed collector current up to 75 A. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that sits hierarchically between a MOSFET and a bipolar power transistor. It is the workhorse device of medium- to high-voltage power conversion, used inside switch-mode power supplies, motor drives, induction heaters, welding inverters, and uninterruptible power systems. Compared to a MOSFET, an IGBT offers much lower conduction loss at 600-1700 V breakdown voltages, while compared to a bipolar transistor it requires only a small gate-drive current, making gate-drive design simple. Key features of the FGA25N120ANTD include a typical VCE(sat) of 2.0 V at IC = 25 A and TC = 25 C, positive temperature coefficient for easy paralleling, low switching loss with Eoff typically 0.96 mJ at IC = 25 A, high avalanche ruggedness, and zero gate-charge design. The trench gate structure combined with NPT technology yields a tight parameter distribution and robust short-circuit behavior. The FGA25N120ANTD is built on onsemi's proprietary NPT Trench process, which removes the buffer layer between the drift region and the P+ collector. This results in a square reverse-bias SOA, lower turn-off switching loss, and a positive temperature coefficient on VCE(sat) that simplifies parallel-operation thermal balancing. The robust body diode further supports inductive load switching. Typical applications include induction heating, microwave ovens, resonant/soft-switching converters, welding equipment, solar inverters, and general-purpose high-voltage inverters up to 1200 V bus. The device is well-suited for circuits running at switching frequencies from a few kHz up to about 40 kHz in hard-switched topologies and up to several hundred kHz in zero-voltage-switching (ZVS) topologies. When designing with this part, observe the maximum junction temperature of 150 C and ensure the switching frequency, gate resistor, and dv/dt snubber are tuned for the target topology. Adequate heatsinking is mandatory at high duty cycle; thermal resistance junction-to-case is typically 0.43 C/W. The anti-parallel diode should be used in bridge configurations, or an external fast-recovery diode added for hard-switched bridge legs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
FS300R12A6P1B - 1200V 300A IGBT Module | Infineon
The Infineon FS300R12A6P1B is a 1200 V, 300 A three-phase IGBT power module from Infineon's EasyPACK family using the latest IGBT6 / TRENCHSTOP 6 generation technology. It integrates six IGBT switches in a standard three-phase inverter topology with anti-parallel Emitter Controlled 3 diodes and a built-in NTC thermistor for temperature monitoring, all housed in a chassis-mount package rated for 1200 V collector-emitter voltage and 300 A nominal current per switch. An IGBT module (Insulated Gate Bipolar Transistor module) is a high-power semiconductor switch that combines the easy gate-drive of a MOSFET with the low conduction loss of a bipolar transistor, packaged as an integrated three-phase or half-bridge block for industrial inverter applications. IGBTs sit hierarchically under power semiconductors -> discrete semiconductors -> wide-bandgap-adjacent silicon switches, enabling motor drives, solar inverters, and UPS systems at multi-kilowatt power levels. Key features include low VCE(sat) for reduced conduction loss, integrated NTC for direct junction-temperature feedback to the DSP/MCU, TVj op = 150 degrees C high-temperature operation, and a press-fit / screw-mount mechanical interface for industrial chassis assembly. The module's 1200 V blocking voltage supports DC-link buses up to 800 V nominal (per typical 600 V / 690 V AC mains with 1.4x derating headroom), and 300 A continuous current delivers three-phase output in the 100-200 kW range for general-purpose drives. The IGBT6 (TRENCHSTOP 6) cell architecture uses micro-pattern trench field-stop technology with thin-wafer processing, achieving a tighter VCE(sat)/Eoff tradeoff than the previous IGBT4 generation. The integrated emitter-controlled 3 diode delivers low reverse-recovery loss, while the on-chip NTC thermistor enables precise thermal derating in variable-frequency drive firmware. Typical applications include industrial variable-frequency drives for three-phase motors, three-phase solar string inverters, uninterruptible power supplies, and industrial servo drives where the module handles 100-250 kW output stages. The 1200 V class also supports battery chargers and high-power welding equipment. The integrated NTC simplifies inverter thermal management firmware compared to discrete IGBT designs. When designing with the FS300R12A6P1B, mount the module to a heatsink or cold plate with proper thermal interface material, keep the DC-link capacitor loop area minimal to suppress switching transients, and use isolated gate drivers with reinforced isolation per IEC 61800-5-1. Maintain VCE breakdown derating - the 1200 V rating requires careful snubber design at DC-link voltages above 800 V.
FS35R12W1T4 - 1200V 35A EasyPACK 1B IGBT Module | Infineon
The Infineon FS35R12W1T4 is a 1200 V, 35 A six-pack IGBT power module in the EasyPACK 1B package, integrating TRENCHSTOP IGBT4 emitter-controlled 4 diodes, and an NTC thermistor for temperature monitoring. The six-pack topology delivers three half-bridge legs in a single module with low-inductance layout and PressFIT-compatible power terminals, simplifying three-phase inverter designs up to about 25 kW switching at 8-16 kHz. An IGBT module is a hybrid power semiconductor assembly that combines insulated-gate bipolar transistors with co-packaged freewheeling diodes in an isolated, baseplate-less housing. It belongs to the power module family within discrete semiconductors, sitting above discrete IGBTs and below integrated power stacks (IPMs) in the power-conversion hierarchy. Six-pack modules are the workhorse building block of three-phase variable-frequency drives, servo amplifiers, and solar string inverters. Key features of the FS35R12W1T4 include a 1200 V collector-emmitter blocking voltage (VCE), 35 A nominal collector current per switch, TRENCHSTOP IGBT4 trench/field-stop technology for low VCE(sat) and soft switching, an integrated NTC for overtemperature protection, and an operating junction range from -40 C to +150 C. The EasyPACK 1B housing is baseplate-less and uses screw-mount power terminals, enabling compact liquid-cooled or forced-air designs. The IGBT4 die is optimized for hard-switching topologies up to roughly 16 kHz, with low switching losses and a robust short-circuit ruggedness of 10 us. The integrated EC4 diodes use the latest emitter-controlled generation for reduced reverse-recovery losses, which directly improves inverter efficiency at higher switching frequencies. Typical applications include three-phase motor drives for industrial pumps, fans, and servo amplifiers, as well as solar string inverters, UPS systems, and welding power supplies. The press-fit variant FS35R12W1T4_B11 shares the same electrical die and offers solder-free assembly for high-volume manufacturing. When designing with this module, ensure the DC-link bus bar layout maintains loop inductance below 30 nH to keep voltage overshoot within the 1200 V rating. Always read the integrated NTC through an isolated amplifier and de-rate the module above 90 C case temperature per the datasheet thermal curves. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
FS35R12W1T4-T7 - 1200V 35A EasyPACK 1B IGBT Module | Infineon
The Infineon FS35R12W1T4-T7 is a 1200 V, 35 A sixpack IGBT power module from the EasyPACK 1B family, integrating TRENCHSTOP IGBT4 switches with Emitter Controlled 4 diodes and an on-board NTC thermistor for temperature monitoring. The module is delivered with T7 chip technology designation and uses solder contact technology in a chassis-mount form factor. An IGBT module is a power-semiconductor building block that combines multiple insulated-gate bipolar transistors and freewheeling diodes in a single isolated package, enabling compact three-phase inverter, rectifier, or chopper designs. Within the broader power-electronics taxonomy, the IGBT sits between MOSFETs (faster, lower voltage) and thyristors (higher power, slower), and is the workhorse device for medium-power motor drives, solar inverters, and UPS systems operating from a few kW to over 100 kW. Key specifications include a collector-emitter voltage rating of 1200 V, a nominal collector current of 35 A (with 65 A pulsed capability per datasheet), a sixpack (three-phase full-bridge) topology, and an integrated brake chopper IGBT/diode pair. The module is part of the EasyPACK 1B family, sharing the same mechanical footprint and pin-out with related EasyPACK devices, which simplifies PCB and heatsink design across product variants. The TRENCHSTOP IGBT4 chip technology combines a trench gate cell with a field-stop layer, achieving low VCE(sat) and reduced switching losses compared to previous-generation NPT IGBTs. The Emitter Controlled 4 diode co-packaged with each switch reduces reverse-recovery losses and improves EMC. An NTC thermistor embedded in the module substrate allows real-time junction-temperature monitoring for thermal protection. Typical applications include low-to-medium power industrial motor drives, servo amplifiers, solar string inverters, UPS systems, and welding equipment. The 1200 V class makes it suitable for 400 V / 480 V AC bus systems and 600 V / 800 V DC-link applications. The EasyPACK 1B platform also enables paralleling multiple modules for higher current. When designing with the FS35R12W1T4-T7, ensure proper thermal management: the module dissipates significant power (over 200 W possible) and requires a thermal interface material, a suitable heatsink, and often forced-air cooling. Gate-driver design must respect the IGBT4 short-circuit ruggedness and provide sufficient negative gate-emitter voltage during turn-off to prevent spurious turn-on caused by the Miller effect. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, helping engineers evaluate sourcing options and second-source strategies.
IGB10N60TATMA1 - 600V 20A TRENCHSTOP IGBT | Infineon
The Infineon IGB10N60TATMA1 is a 600 V, 20 A hard-switching TRENCHSTOP IGBT3 discrete in a surface-mount PG-TO263-3-2 (D2Pak) package, rated for 110 W power dissipation. It combines trench-cell and fieldstop concepts to deliver significant improvements in static and dynamic performance, including low VCE(sat) and fast switching for high-frequency power conversion. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. It is widely used as a high-voltage, high-current switching element, sitting in the broader hierarchy: IGBT -> power transistor -> discrete semiconductor -> power management. The fieldstop layer shortens the drift region, reducing conduction and switching losses simultaneously. Key features of the IGB10N60TATMA1 include a 600 V collector-emmitter breakdown voltage, 20 A continuous collector current at TC=25C, 110 W maximum power dissipation, low saturation voltage VCE(sat), and short-circuit ruggedness for inductive load commutation. The TRENCHSTOP3 cell geometry reduces on-state loss and tail current versus previous-generation NPT IGBTs, enabling higher switching frequencies in hard-switched topologies. The device is optimized for hard-switching applications up to 20 kHz with low EMI and robust dynamic performance. Its integrated gate-emitter protection and wide safe operating area support motor drives, solar inverters, and welding equipment where inductive switching stresses are common. Typical applications include uninterruptible power supplies (UPS), solar microinverters, induction cooking, switch-mode power supplies, and motor control inverters. The D2Pak footprint is compatible with industry-standard TO-263-3 land patterns. When designing with this device, calculate switching and conduction losses at your operating frequency to size the heatsink. The D2Pak package offers a low thermal resistance path when soldered to adequate copper area.
IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon
The Infineon IGB30N60H3ATMA1 is a high-speed 600 V, 30 A single TRENCHSTOP IGBT3 housed in a PG-TO263-3-2 (D2PAK) surface-mount package, rated for 187 W of power dissipation. It is built on Infineon's field-stop trench technology, which delivers MOSFET-like turn-off switching behavior and a tight balance between conduction and switching losses. The part is qualified to industrial-grade reliability standards and is supplied on tape-and-reel for high-volume SMT assembly. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss gate of a MOSFET with the high-current, low-saturation-voltage capability of a bipolar transistor. In the broader power-semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages and higher switching frequencies) and thyristors (used at very high currents); it is the workhorse device for medium- to high-voltage switching converters, motor drives, and inductive heating inverters. Key features of the IGB30N60H3ATMA1 include a collector-emitter breakdown voltage of 600 V, a continuous DC collector current rating of 60 A (pulsed), low saturation voltage VCE(sat) of approximately 1.95 V, and a nominal turn-off time of 262 ns. The trench field-stop structure produces a square reverse-biased safe operating area (RBSOA) and short-circuit ruggedness, while the low gate charge and intrinsic anti-parallel diode simplify half-bridge design. Typical applications for the IGB30N60H3ATMA1 include uninterruptible power supplies (UPS), solar inverters, welding converters, induction heating, switch-mode power supplies (SMPS) with hard-switched topologies, and industrial motor drives. The D2PAK footprint is widely accepted by designers building high-density PFC and inverter stages that require both thermal performance and SMT assembly. When designing with this device, ensure the gate-drive voltage swings between -15 V and +15 V (or at minimum 0 V to +15 V with a negative turn-off bias for hard-switching topologies). The exposed metal tab of the D2PAK must be soldered to a sufficient copper area to keep junction temperature within ratings; at full 60 A conduction the device dissipates well over 100 W and demands careful thermal management. This page synthesizes distributor stock and pricing, same-family TRENCHSTOP drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving the engineer a single decision-ready reference.
IGB50N60T - 600V 50A TRENCHSTOP IGBT3 TO-263 | Infineon
The Infineon IGB50N60T is a 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 discrete in a surface-mount TO-263 (D2Pak) package. It combines trench-cell and fieldstop technology with a soft-recovery emitter-controlled diode, delivering 333 W of continuous power dissipation and excellent static and dynamic switching performance for hard-switched power-conversion stages. An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction losses of a bipolar transistor. Within the discrete power-semiconductor family tree, IGBTs sit between MOSFETs and thyristors: IGBT → bipolar power transistor → discrete semiconductor → power management IC ecosystem. The TRENCHSTOP IGBT3 generation further refined the cell geometry to shrink on-state VCE(sat) and tail losses versus the earlier NPT (non-punch-through) IGBT families. Key specifications include a collector-emitter breakdown voltage VCES of 600 V, a continuous DC collector current IC of 50 A at TC = 100 °C, a pulsed collector current ICM of 150 A, a gate-emitter threshold VGE(th) of typically 5.0 V, a gate-emitter maximum VGES of ±20 V, and a total switching energy Ets of roughly 1.7 mJ at 400 V/25 A. The integrated soft-recovery emitter-controlled diode eliminates the need for an external anti-parallel diode in most bridge legs, reducing BOM count and PCB area. Architecturally, the device uses Infineon's third-generation fieldstop trench design: a thin n- drift region field-stops the depletion layer at reverse bias for high blocking voltage with low VCE(sat), while the trench gate increases channel density per unit area. The co-packaged emitter-controlled diode is engineered for soft reverse recovery (low Qrr), suppressing voltage overshoot and EMI in hard-switched bridges such as PFC stages and motor inverters. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, induction-heating converters, industrial motor drives, and PFC boost stages in switched-mode power supplies. In a 600 V class PFC or full-bridge converter, the IGB50N60T is normally used at switching frequencies of 8 kHz to 40 kHz, balancing switching loss against magnetic size. Its 50 A continuous rating covers 5 kW to 10 kW single-switch converter stages with adequate thermal design. When designing with this part, derate the collector current with TC and ensure the heatsink keeps TJ below 150 °C at worst-case load. The co-packaged diode's reverse-recovery behaviour sets the dead-time requirement in half-bridge stages — too short a dead time risks shoot-through, too long increases conduction loss on the freewheeling diode.
IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK
The Infineon IGB50N60TATMA1 is a hard-switching 600 V, 50 A single TRENCHSTOP IGBT3 in a TO-263 (D2PAK) surface-mount package, delivering up to 100 A pulsed collector current and 333 W of total power dissipation. It combines Infineon's third-generation trench-cell and field-stop concept to significantly improve both static and dynamic performance compared to prior NPT and PT generations. The part is qualified for switching frequencies from DC up to the tens-of-kHz range typical of motor drives, solar inverters, and welding converters. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-controlled gate of a MOSFET with the high-current, low-saturation-voltage conduction capability of a bipolar junction transistor. In the broader component hierarchy it sits between MOSFETs and thyristors in the discrete-semiconductor family, and within power-electronic systems it acts as the primary switching element in the power stage. IGBTs dominate medium-power (400 V to 1700 V blocking voltage) hard-switched converters where MOSFETs become conduction-loss-limited and BJTs require complex base-drive circuits. Key features of the IGB50N60TATMA1 include a low VCE(sat) typical of the Trenchstop 3 family, a short-circuit ruggedness of 5 µs minimum at TC = 25 °C and TJ = 150 °C, and a co-packaged anti-parallel diode optimized for hard-switched inductive loads. The TO-263 (D2PAK) package provides a solderable, surface-mount footprint while still exposing a large metal tab for PCB copper-pour heat spreading, enabling heatsink mounting for high-current continuous operation. Switching losses are tuned for hard-switching topologies with typical Eon in the sub-millijoule range. Architecture-wise, the device uses Infineon's third-generation field-stop (FS) trench gate, which shrinks the drift region thickness and reduces tail-current losses during turn-off. The integrated anti-parallel EmCon3 diode is matched to the IGBT's switching characteristics, suppressing reverse-recovery transients in bridge legs. The wide reverse-bias safe operating area (RBSOA) and square RBSOA allow reliable operation into short-circuit events and inductive snubbers, which is critical for motor and PFC applications. Typical applications for the IGB50N60TATMA1 include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, switched-mode power supplies (SMPS) up to several kilowatts, induction heating, welding equipment, and industrial motor drives for HVAC, pumps, and fans. Designers often pair it with 600 V gate drivers such as the 1ED020I12-B2 or EiceDRIVER 2ED020I12 in half-bridge and three-phase inverter configurations. When designing with this part, carefully observe the maximum lead temperature during soldering (JEDEC J-STD-020 MSL profile) and provide sufficient copper area under the D2PAK tab to keep junction temperature below 150 °C under worst-case continuous load. The 5 µs short-circuit rating demands a fast gate-driver with desaturation (DESAT) protection to safely turn off the device within the rated window.
IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon
The Infineon IGD08N120S7ATMA1 is a 1200V trench-field-stop single IGBT rated for 24A continuous collector current and 106W power dissipation, housed in a surface-mount PG-TO252-3 (DPAK) package. Built on Infineon's seventh-generation (S7) trench-field-stop technology, the device combines low saturation voltage with ultrafast switching for high-frequency power conversion. The trench-field-stop cell structure minimizes conduction loss while the thin-wafer technology reduces turn-off losses and tail current. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges a MOSFET gate input with a bipolar output stage, producing a voltage-controlled device with very low conduction loss at high currents. The IGBT sits in the wider hierarchy: power semiconductor -> discrete transistor -> switching device. IGBTs are widely used where MOSFETs' conduction losses become unacceptable at high voltages and where thyristors cannot be easily controlled by a gate signal. The S7 generation specifically targets industrial inverter and welding applications where switching frequencies of 20-50 kHz and high efficiency are simultaneously required. Key features include a typical VCE(sat) of 1.65 V at the rated operating point, a co-packaged anti-parallel emitter diode for inductive-load commutation, and a wide operating junction temperature range suited to industrial environments. The PG-TO252-3 surface-mount package offers a low-profile footprint suitable for high-density power boards while providing a manageable thermal path through the drain tab. Typical applications span induction heating inverters, welding power supplies, solar string inverters, UPS PFC and inverter stages, and motor drives in the low-to-mid kilowatt range. In each of these the IGD08N120S7's combination of 1200V blocking capability, 24A current handling, and S7 switching performance enables compact designs without sacrificing efficiency. As an industry-grade discrete, the part is well suited to commercial and industrial power conversion rather than automotive AEC-Q101 qualified systems. When designing with this part, observe the 80% derating recommendation from Infineon for lifetime and reliability. Provide adequate copper area on the drain tab for thermal dissipation, place the gate drive resistor close to the gate pin, and ensure the gate-emitter voltage stays within the absolute maximum ratings even during fault transients.
IGW25N120H3FKSA1 - 1200V 25A TRENCHSTOP IGBT3 | Infineon
The Infineon IGW25N120H3FKSA1 is a 1200 V, 25 A single high-speed TRENCHSTOP IGBT3 in a TO-247-3-1 (PG-TO247-3-1) through-hole package, designed for the best compromise between switching and conduction losses. It is a Trench Field Stop IGBT featuring MOSFET-like turn-off switching behavior for low turn-off losses, with a 1200 V collector-emitter breakdown voltage and 50 A peak collector current capability. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor switch that combines the high-current drive capability of a bipolar transistor with the voltage-driven simplicity of a MOSFET. Within the broader power semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages) and thyristors (used at very high power). It belongs to the family of discrete power transistors, which themselves are a category of discrete semiconductors that includes MOSFETs, BJTs, and diodes. TRENCHSTOP IGBT3 is Infineon's third-generation IGBT technology, optimized for hard-switching topologies up to 1200 V. Key features of the IGW25N120H3FKSA1 include 1200 V VCE breakdown, 25 A nominal collector current (50 A pulsed), 326 W maximum power dissipation, and a typical VCE(sat) of 2.05 V. The Trench Field Stop structure provides low saturation voltage combined with fast switching, which is the key engineering trade-off in IGBT design. This device is also co-packed as a single IGBT (no anti-parallel diode), recommended for use in combination with an external SiC diode such as the IDH15S120 for high-frequency rectification. Typical applications include industrial inverters, uninterruptible power supplies (UPS), solar inverters, welding equipment, and induction heating. The high-speed switching characteristics make it especially suitable for resonant and hard-switching converters operating at 8-40 kHz where switching loss dominates. The TO-247 package provides robust mechanical strength and good thermal performance for through-hole mounting in power modules. When designing with the IGW25N120H3FKSA1, ensure adequate heatsinking for the 326 W power dissipation and respect the safe operating area (SOA) at high currents. Gate drive should be a 15 V turn-on with strong gate resistor selection to balance EMI and switching loss. This part is lead-free, RoHS compliant, and qualified for industrial-grade temperature ranges. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond what is in the manufacturer datasheet.
IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon
The Infineon IGW30N60H3FKSA1 is a 600 V, 60 A single TRENCHSTOP IGBT3 in a TO-247 (PG-TO247-3-1) through-hole package, rated at 187 W maximum power dissipation. Built on Infineon's third-generation Trench Field Stop technology, it targets high-frequency switching power topologies where a MOSFET-like turn-off signature is required to minimize switching losses. An IGBT (Insulated Gate Bipolar Transistor) is a minority-carrier power semiconductor that combines a MOSFET gate drive with a bipolar collector output stage. Within the discrete power semiconductor taxonomy, IGBTs sit between MOSFETs (faster, lower current) and thyristors (slower, higher current). The TRENCHSTOP IGBT3 family specifically optimizes the trade-off between conduction loss (VCE(sat)) and switching loss (Eoff), making it well-suited to hard-switched converters up to roughly 100 kHz. Key features include a 600 V collector-emitter breakdown voltage, a 60 A continuous collector current rating (TC = 25 °C), a low VCE(sat) typical of Trench Field Stop cells, and a square reverse-bias safe operating area (RBSOA) that is essentially independent of collector current up to 60 A. The part is co-packaged without an anti-parallel diode, simplifying designs where a separate ultrafast rectifier is preferred. The Trench Field Stop cell structure creates a thin, lightly-doped N- drift region terminated by a field-stop buffer, which simultaneously shrinks Eoff and tightens the fall-time distribution. This yields low turn-off losses and predictable switching behaviour across the full current range, simplifying snubber design and EMI filtering. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, industrial motor drives, induction heating, and PFC boost stages operating from 230 V or 400 V rectified mains. Designers commonly pair the IGW30N60H3FKSA1 with gate driver ICs such as 1EDN7550B or 2ED2106S06F and a dedicated antiparallel diode. When designing with this part, gate-drive voltage must swing from 0 V (or negative bias) to +15 V to fully enhance the channel and minimize VCE(sat); a gate resistor of 5-20 Ω controls ringing and dV/dt-induced turn-on. PCB layout must keep the gate loop area minimal to preserve the MOSFET-like turn-off behaviour. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, with all parameters verified against Infineon's published sources.
IGW40N120H3FKSA1 - 1200V TrenchStop IGBT3 80A TO-247 | Infineon
The Infineon IGW40N120H3FKSA1 is a 1200 V, 40 A (collector current) high-speed single IGBT3 in a TO-247-3-1 through-hole package, leveraging Infineon's TRENCHSTOP™ technology for an optimum balance of switching and conduction losses. The device is rated for a pulsed collector current of 160 A, total power dissipation of 483 W, and operates over a junction temperature range of -40 °C to +175 °C, suiting it for hard-switched industrial power topologies. An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss characteristics of a MOSFET gate with the high-current, low-saturation-voltage behavior of a bipolar junction transistor. IGBTs sit at the boundary between discrete power transistors and power modules and form the active switching element in the majority of medium-to-high power converters from 600 V to 1700 V. They belong to the broader power semiconductor hierarchy: transistor -> bipolar device -> IGBT -> discrete switching device -> power management building block. Key features of the IGW40N120H3FKSA1 include its Trench Field Stop cell structure with a gate charge of 185 nC, a MOSFET-like turn-off switching behavior that yields low Eoff, and a robust short-circuit withstand capability suited for inverter and welder duty cycles. The TO-247-3-1 package provides a tab that can be bolted to a heatsink for direct thermal extraction, while the through-hole leads support hand-soldering and wave-solder assembly. The part is qualified to industrial reliability standards and offers stable switching parameters across temperature, enabling repeatable EMI signature in production. Typical applications for this part include motor drives for industrial automation, solar inverters, uninterruptible power supplies (UPS), induction heating, welding equipment, and switched-mode power supplies operating at switching frequencies between 8 kHz and 40 kHz. The 1200 V collector-emitter breakdown rating gives it ample headroom for 380-480 V AC rectified bus rails up to 700 V DC link voltage. When designing with this IGBT, gate-drive resistor selection, desaturation (DESAT) short-circuit protection, and thermal management at the case-to-heatsink interface are the critical design considerations. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers evaluating TRENCHSTOP™ third-generation devices for new designs or as second-source parts can use the comparison_table, design_notes, and selection_guide below.
IHW30N160R5XKSA1 - 1600V 30A RC-IGBT Diode | Infineon TO-247
The Infineon IHW30N160R5XKSA1 is a 1600 V, 30 A reverse-conducting IGBT (RC-IGBT) with monolithically integrated anti-parallel diode, housed in a TO-247-3 through-hole package. Built on Infineon's R5/RC-H5 trench-stop field-stop technology, it combines the main IGBT switch and its freewheeling diode in a single silicon die, eliminating the need for an external anti-parallel diode in half-bridge and single-switch topologies. The device is rated for 1600 V collector-emitter voltage (VCES), 60 A continuous collector current (IC at TC=25°C) and 263 W maximum power dissipation. Reverse-conducting IGBTs are a class of IGBTs that integrate a fast-recovery diode on the same die as the IGBT, optimized for hard-switching topologies where the body diode must conduct reverse current. They sit in the device hierarchy: IGBT -> reverse-conducting IGBT -> power semiconductor -> discrete semiconductor. RC-IGBTs reduce parasitic loop inductance, lower conduction losses from monolithic diode, and shrink the BOM by eliminating an external diode component. The R5 family is specifically engineered for the high-frequency, high-current demands of induction cooking resonant half-bridges. Key features include low VCE(sat) of 1.85 V at IC=30 A (per Newark listing), easy parallel switching thanks to positive temperature coefficient in VCE(sat), and a rugged short-circuit withstand capability. The TO-247-3 package provides industry-standard mounting compatibility and superior thermal performance, making it straightforward to replace discrete IGBT + diode pairs with a single part. Operating junction temperature spans -40°C to +175°C. The IHW30N160R5XKSA1 uses Infineon's RC-H5 reverse-conducting cell design with a thin-wafer field-stop layer, achieving a balanced trade-off between conduction losses, switching losses, and diode reverse-recovery softness. The monolithically integrated diode has matching current and voltage ratings to the IGBT section, simplifying gate-drive design. The result is a single part number that replaces two discrete components (IGBT + ultrafast diode) in many circuits, reducing PCB area and assembly cost. Typical applications include induction cooking appliances (resonant half-bridge inverter), microwave ovens, rice cookers, and other home appliance inverter stages that demand high-frequency switching at high currents. The wide VCES rating of 1600 V also supports industrial soft-start and welding inverter front-ends, where the integrated diode simplifies layout and reduces EMI from diode recovery transients. When designing with this part, ensure sufficient gate-drive voltage (typically 15 V) and gate resistance (10-47 ohm) to control switching speed. A snubber across collector-emitter is recommended for very high di/dt applications. The positive temperature coefficient of VCE(sat) makes thermal paralleling feasible for high-power designs.
IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon
The Infineon IHW40N120R5XKSA1 is a 1200 V, 40 A Reverse-Conducting (RC-H5) trench-field-stop IGBT with a monolithically integrated anti-parallel diode, housed in a TO-247-3 through-hole package. The device is rated for 1200 V collector-emitter blocking voltage and 80 A pulsed collector current, with a maximum power dissipation of 394 W. Optimized specifically for induction cooking, the R5 family combines very low VCE(sat) with soft switching behavior and an integrated freewheeling diode to simplify resonant converter design. An IGBT (Insulated-Gate Bipolar Transistor) is a voltage-controlled semiconductor switch that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar junction transistor. The RC-H5 variant adds a monolithically integrated anti-parallel diode on the same silicon die, eliminating the need for an external flyback diode and reducing parasitic inductance in the commutation loop. In the broader hierarchy, an IGBT sits between power MOSFETs (used below ~600 V) and higher-voltage thyristors, occupying the mid-voltage (>600 V, <1700 V) switching converter niche. Key features include low VCE(sat) for reduced conduction loss, soft-switching-optimized trench-field-stop technology, integrated reverse-conducting diode, low EMI signature, and very tight parameter distribution for parallel operation. The TO-247-3 package provides industry-standard mounting, isolated tab, and a wide safety operating area (SOA) suitable for resonant half-bridge topologies. Infineon's recommended derating ceiling is 80% of maximum ratings for optimum lifetime. Typical applications include induction cooking appliances, resonant half-bridge converters, soft-switching topologies, induction heating inverters, and home appliances such as rice cookers and microwave ovens. The high current and voltage ratings also suit industrial induction heaters and welding power supplies where the integrated diode simplifies the heatsink layout. When designing with this part, ensure the gate driver can supply the IGBT's gate charge and the snubber layout minimizes stray inductance at the switching node. Use the integrated diode for resonant current paths; an external ultra-fast diode is generally not required but may improve reverse-recovery behavior in non-resonant stages.
IKB20N60H3ATMA1 - 600V 20A TRENCHSTOP™ IGBT3 D2PAK | Infineon
The Infineon IKB20N60H3ATMA1 is a high-speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packaged with a free-wheeling diode in a surface-mount PG-TO263-3 (D2PAK) package, rated for 170 W of total power dissipation. It is qualified to 175°C virtual junction temperature and optimized for hard-switching topologies where the best compromise between switching and conduction losses is required. An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. IGBTs sit in the power-converter device hierarchy as: IGBT -> power transistor -> discrete semiconductor -> power management building block. They are the workhorse switches in hard-switched power conversion between roughly 400 V and 1700 V, where MOSFETs become inefficient and thyristors cannot be self-commutated. The TRENCHSTOP™ IGBT3 generation adds a thin-wafer trench field-stop cell that shrinks Eoff and VCE(sat) simultaneously versus the older NPT (Non-Punch-Through) generation. The headline characteristics of the IKB20N60H3ATMA1 include a 600 V collector-emitter breakdown rating, a 20 A nominal collector current (40 A pulsed per the distributor listings), and a co-packed single anti-parallel diode that handles the inductive free-wheeling current. Its key differentiator versus standard 600 V IGBTs is MOSFET-like turn-off behavior: a clean current tail with low Eoff, which lets designers raise switching frequency without paying a thermal penalty. The part also includes a diode with controlled diF/dt = 1000 A/μs reverse-recovery softness for low EMI in motor drives. Architecturally, the IGBT3 die uses a punch-through field-stop buffer layer and trench-gate cell, which keeps VCE(sat) low at high current density and reduces turn-off losses by roughly 20-30% versus the previous IKB20N60H2 generation. The co-packaged EmCon3 free-wheeling diode is a monolithically integrated emitter-controlled structure that matches the IGBT switching speed, enabling low reverse-recovery charge (Qrr) and therefore low switching losses in continuous hard-switched PWM. Typical applications include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, welding inverters, server and telecom SMPS power factor correction (PFC) stages, induction-heating resonant converters, and industrial motor drives from 0.5 kW to 5 kW. The D2PAK surface-mount package enables high-volume automated assembly while maintaining a creepage distance compatible with reinforced insulation when an RTV-filled PCB slot is provided under the tab. When designing with this part, observe the maximum 175°C virtual junction temperature and derate switching losses against the actual case-to-ambient thermal resistance of the PCB footprint. The exposed tab must be soldered to a minimum copper area (typically ≥ 6 cm² on FR-4 with 2 oz copper) to keep RthJA below 40 K/W at full load. A gate drive of +15 V Vge with a -5 V to -8 V negative turn-off bias is recommended to prevent parasitic turn-on in bridge topologies. This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK footprint, and practical thermal/layout design notes that go beyond the headline datasheet block diagram.
IKB30N65EH5ATMA1 - 650V 30A TRENCHSTOP 5 IGBT, D2Pak | Infineon
The Infineon IKB30N65EH5ATMA1 is a 650 V, 30 A TRENCHSTOP 5 high-speed switching IGBT co-packed with a full-rated RAPID 1 anti-parallel diode, delivered in a surface-mount PG-TO263-3 (D2Pak) package. It features a trench field-stop cell design, 188 W maximum power dissipation, and a collector current rating of 55 A pulsed, making it suitable for hard-switching topologies up to several tens of kilohertz. What is an IGBT? An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low conduction loss of a bipolar transistor. It belongs to the power semiconductor family, sitting between MOSFETs (used at lower voltages and higher frequencies) and thyristors (used at very high currents). IGBTs are the workhorse devices in modern power electronics for voltages from 600 V to 6.5 kV, bridging the MOSFET and thyristor hypernyms and forming part of the broader semiconductor taxonomy. Key features of the IKB30N65EH5ATMA1 include low VCE(sat) for reduced conduction loss, soft switching behavior that minimizes EMI, integrated anti-parallel diode for half-bridge simplicity, and a wide operating temperature range of -40C to +175C. The TRENCHSTOP 5 thin-wafer technology reduces both turn-on and turn-off losses, enabling higher switching frequencies and smaller magnetics in the overall converter design. Architecturally, the device uses Infineon's fifth-generation trench field-stop cell with an optimized emitter structure, providing a tight trade-off between VCE(sat) and Eoff. The co-packaged RAPID 1 diode eliminates the need for an external anti-parallel diode in half-bridge and inverter legs, simplifying PCB layout and reducing parasitic inductance that can otherwise cause voltage overshoot during diode reverse recovery. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding equipment, industrial motor drives, and power factor correction (PFC) stages. The 650 V blocking voltage comfortably supports 400 V rectified mains and 480 V industrial bus systems with adequate derating margin. When designing with this part, ensure the gate driver can supply the recommended +15 V / -8 V gate drive and that the PCB layout minimizes stray inductance in the power loop to avoid over-voltage spikes during switching. Thermal management must account for up to 188 W dissipation in the D2Pak package, which typically requires a substantial copper pad area or external heatsink.
IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon
The Infineon IKD04N60RATMA1 is a 600 V, 8 A trench Field Stop IGBT with an integrated anti-parallel diode, housed in a surface-mount PG-TO252-3 (DPAK) package with 75 W of power dissipation. It belongs to Infineon's RC-Drives IGBT technology family, which has been developed as a cost-optimized solution for sensitive consumer drives and small appliance markets. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high-input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. IGBTs occupy the middle ground in the power-switch hierarchy between MOSFETs (best for low-voltage, high-frequency) and thyristors (best for very high power). They are commonly used in motor drives, induction heating, and switched-mode power supplies operating at 400 V to 1200 V bus voltages. The integrated co-packaged diode provides a freewheeling path for inductive loads, eliminating the need for an external anti-parallel rectifier. Key features include a low saturation voltage VCE(sat) optimized for low switching losses, a robust short-circuit ruggedness, and a gate threshold voltage compatible with standard 15 V gate-drive signals. The PG-TO252-3 (DPAK) package provides a low thermal-resistance path via its exposed metal tab, enabling surface-mount assembly while still dissipating up to 75 W when properly soldered to a sufficient copper land area. The part is qualified for consumer and white-goods applications and is widely used in appliance motor control. The RC-Drives technology uses Infineon's field-stop trench cell design, which shrinks the die area while preserving low conduction loss. This part is specifically targeted at hard-switching topologies in continuous-conduction mode, such as variable-frequency drives (VFD) for washing machines, dishwashers, HVAC fans, and small industrial pumps. The integrated diode also reduces BOM cost and PCB area in half-bridge and three-phase inverter stages. Typical applications include BLDC motor control in refrigerators and fans, PFC + inverter stages in air-conditioner outdoor units, low-power solar micro-inverters, and induction-cooking assist circuits. The 8 A continuous rating matches sub-1 HP (sub-750 W) motor drives at 230 V AC rectified bus voltage. Designers benefit from a single part number covering both the switching transistor and the freewheeling diode, simplifying sourcing and reducing assembly errors. When designing with this part, ensure the PCB copper pad under the tab is sized for the expected dissipation. A 1 oz copper, 1 square inch pad keeps junction-to-ambient thermal resistance around 50 C/W, supporting continuous operation at moderate loads. Always add a gate resistor of 10 to 47 ohm to limit ringing, and confirm the gate driver can sink enough current to rapidly discharge the Miller capacitance at turn-off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon
The Infineon IKD06N60RATMA1 is a 600 V, 12 A TRENCHSTOP Reverse Conducting (RC) IGBT3 with an integrated anti-parallel diode, housed in a PG-TO252-3 (DPAK) surface-mount package. It combines a 600 V collector-emitter breakdown rating with a 12 A continuous collector current and 100 W maximum power dissipation, making it a cost-optimized hard-switching platform for sensitive consumer drive applications. The integrated reverse-conducting monolithic diode eliminates the need for an external freewheeling diode, reducing BOM count and parasitic inductance in the switching loop. An IGBT (Insulated-Gate Bipolar Transistor) is a minority-carrier power semiconductor that combines the high-current drive capability of a bipolar transistor with the voltage-controlled gate of a MOSFET. In the reverse-conducting variant (RC-IGBT), the anti-parallel diode is monolithically integrated into the same silicon die, providing a single-chip solution for half-bridge and totem-pole switching stages. The IGBT sits in the power semiconductor hierarchy: IGBT -> power transistor -> discrete semiconductor -> active component, and serves as the workhorse for medium-power (kW range) switching applications operating from 400 V to 1200 V DC bus rails. Key features include TRENCHSTOP IGBT3 cell technology, monolithic reverse-conducting diode, low VCE(sat) for reduced conduction loss, and a robust short-circuit withstand capability. The field-stop layer minimizes tail current during turn-off, allowing switching frequencies in the 4 kHz to 20 kHz range typical of small motor drives. The PG-TO252-3 (DPAK) package delivers an industry-standard surface-mount footprint with a metal tab that serves as the collector terminal and provides direct PCB heatsinking. Typical applications include low-power motor drives (drain pumps, fans, mixer motors), washing-machine universal-motor controllers, air-conditioner compressor inverters, and small home-appliance SMPS PFC stages. The wide 600 V rating provides sufficient margin for 230 VAC rectified-bus applications, while the 12 A rating supports motor outputs in the 100 W to 750 W range. When designing with this device, ensure adequate copper area on the DPAK tab for heatsinking and respect the dv/dt limits during turn-off to avoid parasitic turn-on of the high-side device in half-bridge configurations. A gate resistor of 10-47 ohm is typically recommended for EMI control.
IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon
The Infineon IKD10N60RC2ATMA1 is a 600 V, 10 A TRENCHSTOP RC2-series IGBT with monolithically integrated reverse-conducting diode, housed in a surface-mount PG-TO252-3 (DPAK) package. It combines a Trench Field Stop IGBT cell with a co-packed anti-parallel diode optimized for hard-switching topologies, delivering 18.8 A pulsed collector current and 79 W maximum power dissipation. An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high-input-impedance, voltage-driven gate of a MOSFET with the low-conduction-loss output stage of a bipolar transistor. As a discrete single-device solution, it sits in the power-management hierarchy between signal-level logic ICs and high-power modules, enabling efficient switching in the 600 V class for industrial and consumer applications. The RC2 family integrates the freewheeling diode inside the same silicon die, eliminating the need for an external anti-parallel diode and reducing parasitic inductance. Key features include 600 V collector-emitter breakdown voltage, 10 A continuous DC collector current (I_C nom), 18.8 A pulsed collector current, low V_CE(sat) typical values in the 1.5 V range for reduced conduction loss, and a monolithically integrated diode co-packed for hard-switched bridge topologies. The trench field-stop cell technology delivers a tight trade-off between V_CE(sat) and switching losses, suiting it to 10-30 kHz switching frequencies typical of motor drives and SMPS. Typical applications include low-power motor drives (drum motors, small fans, appliance pumps), induction-cooking and microwave-oven inverters, PFC boost switches in SMPS, welding-machine primary stages, and uninterruptible power supply (UPS) inverter legs. The PG-TO252-3 surface-mount package enables high-density PCB designs and is compatible with automated SMT assembly. When designing with the IKD10N60RC2, gate-drive considerations are critical: a +15 V gate-emitter voltage is recommended to fully enhance the IGBT, and a gate resistor in the 10-47 ohm range controls switching speed and dv/dt. Thermal management should assume that the integrated diode contributes additional conduction loss in inverter legs, and the PG-TO252-3 footprint requires adequate copper pour on the drain tab to keep junction temperature below 175 C. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IKD15N60RATMA1 - 600V 30A Trench Field-Stop IGBT | Infineon
The Infineon IKD15N60RATMA1 is a 600V, 30A trench field-stop IGBT with integrated anti-parallel diode, housed in a surface-mount PG-TO252-3 (DPAK) package. It combines a 1.65V low-saturation VCE(sat) with 250W total power dissipation and nanosecond-class switching (16ns typical fall time), optimized for cost-sensitive consumer drives and appliance motor control. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-driven gate of a MOSFET with the low conduction loss of a bipolar junction transistor. Within the power-device hierarchy, IGBTs sit between MOSFETs (used at lower voltages/higher frequencies) and thyristors (used at very high currents), making them the dominant switch for 400V-1200V medium-power conversion. The Trench Field-Stop cell architecture used in the IKD15N60R family shrinks die area per ampere while keeping tail-current low during turn-off. Key features include 600V collector-emitter breakdown, 30A continuous DC collector current at TC=100C, 2.1V VCE(sat) at 15V VGE and 15A IC, 90nC typical gate charge, and an integrated reverse-conducting diode qualified for hardswitched bridge legs. The PG-TO252-3 footprint is the industry-standard DPAK land pattern, allowing direct replacement of competing 600V-class single-IGBT discretes in the same copper pad layout. Typical applications include permanent-magnet synchronous motor (PMSM) and brushless DC (BLDC) drives in washing machines, refrigerator compressors, fans, pumps, and small industrial inverters up to ~3 kW. Infineon's RC-Drives technology targets consumer-grade price points without sacrificing the ruggedness needed for inductive loads. For reliable operation, keep the gate-emitter drive at 15V with a 10 ohm gate resistor, place a 100nF CGE Miller clamp close to the gate pin, and ensure the exposed tab is soldered to a copper area of at least 100 mm^2 to keep junction temperature below 175C. According to the manufacturer datasheet, thermal resistance junction-to-case is 0.5 C/W, so derate from 250W at TC=25C toward lower dissipation at higher case temperatures. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical switching-layout notes not found in the manufacturer datasheet alone, helping engineers source a second-source part or evaluate substitutes quickly.
IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon
The Infineon IKD15N60RFATMA1 is a 600 V, 15 A TRENCHSTOP IGBT3 with an integrated anti-parallel diode, housed in a 3-pin (2 + tab) PG-TO252-3 (DPAK) surface-mount package and rated for 250 W maximum power dissipation. Built on Infineon's field-stop trench technology, this RC-Drives Fast variant targets hard-switching consumer drive applications such as washing machines, refrigerator compressors, fans, and small industrial motor drives. The integrated co-pack diode eliminates the need for an external freewheeling rectifier, simplifying the BOM and reducing reverse-recovery losses in the inverter stage. An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction (saturation) loss of a bipolar junction transistor. Within the broader taxonomy, IGBTs sit between power MOSFETs (better for low-voltage/high-frequency) and thyristors (better for very high voltage/current), making them the dominant switch for 400 V to 1200 V motor drives, UPS systems, and induction-heating converters. The TRENCHSTOP IGBT3 generation specifically optimizes the VCE(sat)/Eoff trade-off curve compared with the older IGBT2 generation, yielding lower switching losses in hard-switched 600 V bridge topologies. Key features include a 600 V collector-emitter breakdown voltage (VCES), 30 A continuous collector current (IC at TC = 25 C), a typical VCE(sat) of around 1.5 V at nominal current, and a maximum operating junction temperature of 175 C. The integrated emitter-controlled diode supports reverse-conduction operation in half-bridge and full-bridge inverters, removing the need for a separate ultrafast rectifier across the IGBT. The DPAK (TO-252-3) package is qualified for high-volume surface-mount manufacturing and offers a tab that doubles as the collector terminal, simplifying PCB layout and thermal sinking to a copper pad. In typical application, the IKD15N60RF is used in a 3-phase IGBT inverter stage supplied by a rectified 230 VAC or 310 VDC bus, switching at 4 kHz to 20 kHz to drive a 3-phase induction or BLDC motor. The integrated anti-parallel diode simplifies the bridge layout and reduces dead-time requirements. Compared with discrete IGBT + diode solutions, the co-pack version reduces component count by 33% in a 3-phase bridge and improves thermal coupling between the IGBT and its diode, enabling smaller heatsinks in cost-sensitive consumer appliances. When designing with this part, ensure that the gate drive voltage reaches at least 15 V during turn-on (VGE(th) is typically 5.5 V; full enhancement requires 15 V) and that the layout keeps the gate loop inductance below 30 nH. The tab is electrically connected to the collector, so a thermal interface material or solder-filled thermal via under the tab is required to keep Tj below 150 C at full 15 A load. Avoid paralleling these parts without external gate-source balancing resistors, as the VCE(sat) tolerance can cause current imbalance. This page synthesizes distributor pricing, pin-compatible drop-in alternatives (same Infineon family, then cross-brand options), and practical thermal and gate-drive design notes not found in the manufacturer datasheet, with a focus on the consumer appliance motor-drive market segment that this IKD15N60RF was developed to serve.
IKN06N60RC2ATMA1 - 600V 8A RC2 Reverse-Conducting IGBT | Infineon
The Infineon IKN06N60RC2ATMA1 is a 600 V, 8 A reverse-conducting IGBT from Infineon's RC2 (Reverse Conducting 2) technology family, housed in a surface-mount PG-SOT223-3 package. It integrates a monolithically co-packed anti-parallel diode within the IGBT die, providing a single-chip solution for half-bridge and hard-switched power stages. The device is rated for 8 A continuous collector current and 7.2 W maximum power dissipation, optimized for cost-effective medium-frequency switching. An RC (Reverse Conducting) IGBT is a single-die power switch that combines the IGBT transistor and a freewheeling diode on the same silicon substrate, eliminating the need for an external anti-parallel diode. This integration reduces parasitic inductance, simplifies PCB layout, lowers BOM cost, and improves reliability by removing the diode-to-IGBT bond-wire connection that often fails in discrete designs. RC-IGBTs are widely used in home-appliance motor drives, induction cooking, and welding inverters where cost-sensitive, high-volume power conversion is required. The IKN06N60RC2ATMA1 features a typical VCE(sat) of 2 V at rated current, low switching losses optimized for hard-switched topologies, and a 600 V collector-emitter breakdown voltage that provides 100 V safety margin above standard 400 V rectified mains. The monolithically integrated diode delivers robust reverse-recovery behavior matched to the IGBT's switching characteristics, eliminating the diode selection step from the design cycle. The device is also known as part of Infineon's 600 V RC2 product family. Typical applications include induction cooking inverter half-bridges, low-power motor drives for pumps and fans, electronic ballasts for fluorescent and HID lighting, and small uninterruptible power supplies (UPS). The 8 A current rating and 600 V blocking voltage suit 1-phase rectified mains (220-240 VAC) and 3-phase 400 V rectified bus designs. The PG-SOT223-3 surface-mount package supports high-volume automated assembly while providing sufficient thermal performance for these moderate-power applications. When designing with this device, ensure adequate copper area on the PCB for the tab to act as a heat spreader. The gate drive should use a 15 V supply with a gate resistor in the 10-47 ohm range to control switching speed and EMI. The integrated diode's reverse-recovery characteristics are tuned for hard switching, so this part is not recommended for zero-voltage-switching (ZVS) or zero-current-switching (ZCS) resonant topologies. This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical thermal design notes not found in the standalone manufacturer datasheet, helping engineers shorten selection time and avoid common design pitfalls in cost-sensitive 600 V switching applications.
IKP15N60T - 600V 15A TRENCHSTOP IGBT TO-220 | Infineon
The Infineon IKP15N60T is a 600 V, 15 A hard-switching TRENCHSTOP™ and Fieldstop IGBT3 copacked with a full-rated free-wheeling Emitter Controlled HE anti-parallel diode, housed in a TO-220 (PG-TO220-3-1) through-hole package with very low typical VCE(sat) of 1.5 V and a maximum junction temperature of 175 °C. It is qualified to withstand short-circuit operation for 5 microseconds and delivers significant static and dynamic performance gains versus prior-generation NPT IGBTs due to the combination of trench-cell and field-stop layers. The device targets cost-sensitive, hard-switched topologies that demand a clean co-packed diode and a robust thermal envelope. An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that combines the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Within the power semiconductor hierarchy, the IGBT sits between MOSFETs and thyristors: above MOSFETs for high-voltage (>400 V) applications where Rdson losses become excessive, and below thyristors where latching and conduction are desired. The "TRENCHSTOP" generation uses an etched-gate trench structure to improve channel density and reduce VCE(sat), while the "fieldstop" buffer minimises tail switching loss, which together push switching energies down by 40-50% versus planar PT devices. The co-packed EmCon HE freewheeling diode (HE = high efficiency) is reverse-recovery-soft, which reduces EMI and dv/dt stress on the companion switch. Key features include: VCE(sat) of 1.5 V typical at rated current, VCE of 600 V (collector-emitter blocking), IC of 15 A continuous (DC collector current 26-30 A pulsed), anti-parallel EmCon HE diode rated to match the IGBT, 5 microsecond short-circuit withstand time, 175 °C maximum operating junction temperature, and 130 W maximum power dissipation. The TO-220 package provides a tab that serves as an exposed heatsink surface and a single mounting hole for a clip or screw. The IKP15N60T is intended for hard-switched converter topologies at switching frequencies in the 4-30 kHz band. Typical deployments include uninterruptible power supplies (UPS), solar inverters, induction heating, and welding machine primary-side switches. The 600 V class rating leaves comfortable margin above rectified 230 V AC (peak 325 V DC) and 400 V rectified three-phase rails (≈565 V DC), allowing non-critical snubbers to be simplified. The 5 microsecond short-circuit withstand rating supports industrial motor drives that must survive transient overload conditions per IEC 60134-1. For the design engineer, the critical decision is whether a co-packaged diode is wanted. The IKP15N60T includes the diode internally; bare IGBTs of the same generation (e.g. IGB15N60T, if available separately) require an external anti-parallel rectifier. The TO-220 package is footprint-compatible with virtually every discrete 600 V IGBT and MOSFET in the industry, simplifying PCB layout. Power dissipation must be checked: at 15 A and VCE(sat) of 1.5 V, conduction loss is ≈22.5 W; a clip-on or PCB-mount heatsink is mandatory. This page synthesizes current distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and lay out the IKP15N60T with confidence.
IKW20N60TFKSA1 - 600V 20A TrenchStop IGBT | Infineon TO-247
The Infineon IKW20N60TFKSA1 is a 600 V, 20 A TRENCHSTOP IGBT3 discrete transistor co-packaged with a full-rated free-wheeling diode in a TO-247-3 (PG-TO247-3-1) through-hole package, featuring very low Vce(sat) and soft, fast-recovery anti-parallel emitter-controlled diode. It is part of Infineon's "Low Loss DuoPack" IGBT family targeting hard-switching topologies at 600 V class. The integrated diode eliminates the need for an external anti-parallel rectifier in half-bridge and bridge configurations, reducing BOM count and parasitic loop inductance. An IGBT (Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low conduction loss of a bipolar transistor. In the broader taxonomy it sits between power MOSFETs and thyristors: IGBT -> power semiconductor -> discrete semiconductor -> power management. TRENCHSTOP is Infineon's brand name for its field-stop / trench-cell IGBT technology generation, offering lower Vce(sat), reduced switching loss, and softer turn-off behavior than earlier planar NPT generations. Key differentiating features of the IKW20N60TFKSA1 include low Vce(sat) for reduced conduction losses, low switching losses, positive temperature coefficient in Vce(sat) enabling easy paralleling, and a very soft fast-recovery anti-parallel Emitter Controlled Diode (ECD) that minimizes reverse-recovery losses and voltage overshoot. The TO-247-3 package provides a low thermal resistance path and is widely accepted in industrial power designs. Architecture-wise this part uses a TRENCHSTOP field-stop IGBT3 cell with an emitter-controlled co-packaged diode on a single die-lead-frame, which significantly improves both static and dynamic performance compared to older NPT 600 V IGBTs of the same current class. The positive temperature coefficient of Vce(sat) simplifies thermal balancing when multiple devices are paralleled for higher current. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding equipment, induction heating, industrial motor drives, and power-factor correction (PFC) stages operating at switching frequencies from 8 kHz up to approximately 30 kHz in hard-switching topologies. Designers choose the IKW20N60TFKSA1 when they need a robust 600 V / 20 A co-packaged IGBT-diode building block with proven reliability. Design consideration: ensure the gate drive voltage is at +15 V on turn-on and a negative bias (typically -5 to -15 V) on turn-off to prevent parasitic turn-on from Miller-induced dV/dt; provide a sufficiently sized DC-link snubber and minimize commutation loop inductance for reliable hard-switching operation above 10 kHz. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, providing an engineering decision resource for power electronics designers selecting a 600 V co-packaged IGBT.