1EDN7126GXTMA1 vs 1EDN7511BXUSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7126GXTMA1 sa pamamagitan ng Infineon at 1EDN7511BXUSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7126GXTMA1 1EDN7511BXUSA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Inverting, Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Hanay ng Temperature na Operasyon -40C to +125C -40 C to +150 C
Packhaging PG-VSON-10-4 PG-SOT23-6-2 (6-pin SOT-23)
Uri ng Pagpapasok Surface Mount Surface Mount (SMD/SMT)
Level ng MSL [DATA_NEEDED: MSL rating] —
Tindminan RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) TTL / CMOS
Driver Type — Low-Side, Single Channel
Number of Drivers — 1
Bilang ng Outputs — 1
Oras ng Pagtaas — [DATA_NEEDED: rise time ns]
Time ng Pagbaba — 4.5 ns
Propagation Delay — ±5 ns (matched)
Supply Voltage na Operasyon — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (integrated)
Output Stage — True low-impedance complementary rail-to-rail
Packaging — Cut Tape (Tape & Reel available)

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