1EDN7126GXTMA1 vs 1EDN7511BXUSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7126GXTMA1 disebabkan oleh Infineon dan 1EDN7511BXUSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7126GXTMA1 1EDN7511BXUSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Inverting, Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Gambaran Suhu Operasi -40C to +125C -40 C to +150 C
Kemasan PG-VSON-10-4 PG-SOT23-6-2 (6-pin SOT-23)
Jenis Pemasangan Surface Mount Surface Mount (SMD/SMT)
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) TTL / CMOS
Driver Type — Low-Side, Single Channel
Number of Drivers — 1
Bilangan Output — 1
Masa Pertambahan — [DATA_NEEDED: rise time ns]
Masa jatuh — 4.5 ns
Propagation Delay — ±5 ns (matched)
Tegangan Pemberi Arus Operasi — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (integrated)
Output Stage — True low-impedance complementary rail-to-rail
Packaging — Cut Tape (Tape & Reel available)

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