1EDN7511BXUSA1 vs 1EDN7126GXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7511BXUSA1 dari Infineon dan 1EDN7126GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7511BXUSA1 1EDN7126GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Jumlah Output 1 —
Configuration Inverting, Non-Inverting Non-Inverting
Peak Source Current 4 A 1.5 A
Peak Sink Current 8 A 1.5 A
Waktu naik [DATA_NEEDED: rise time ns] —
Waktu Menurun 4.5 ns —
Propagation Delay ±5 ns (matched) —
Tegangan Pemuat Kerja [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS 3.3 V / 5 V TTL/CMOS (TDI)
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Rentang Suhu Kerja -40 C to +150 C -40C to +125C
Paket PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Tipe Mounting Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Fungsi — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Level MSL — [DATA_NEEDED: MSL rating]
Reach — Compliant

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