1EDN7511BXUSA1 vs 1EDN7126GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7511BXUSA1 sa pamamagitan ng Infineon at 1EDN7126GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7511BXUSA1 1EDN7126GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Bilang ng Outputs 1 —
Configuration Inverting, Non-Inverting Non-Inverting
Peak Source Current 4 A 1.5 A
Peak Sink Current 8 A 1.5 A
Oras ng Pagtaas [DATA_NEEDED: rise time ns] —
Time ng Pagbaba 4.5 ns —
Propagation Delay ±5 ns (matched) —
Supply Voltage na Operasyon [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS 3.3 V / 5 V TTL/CMOS (TDI)
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Hanay ng Temperature na Operasyon -40 C to +150 C -40C to +125C
Packhaging PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Uri ng Pagpapasok Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Fungsi — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Level ng MSL — [DATA_NEEDED: MSL rating]
Reach — Compliant

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita