1EDN7511BXUSA1 vs 1EDN7126GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7511BXUSA1 disebabkan oleh Infineon dan 1EDN7126GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7511BXUSA1 1EDN7126GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Bilangan Output 1 —
Configuration Inverting, Non-Inverting Non-Inverting
Peak Source Current 4 A 1.5 A
Peak Sink Current 8 A 1.5 A
Masa Pertambahan [DATA_NEEDED: rise time ns] —
Masa jatuh 4.5 ns —
Propagation Delay ±5 ns (matched) —
Tegangan Pemberi Arus Operasi [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS 3.3 V / 5 V TTL/CMOS (TDI)
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Gambaran Suhu Operasi -40 C to +150 C -40C to +125C
Kemasan PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Jenis Pemasangan Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Fungsi — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Aras MSL — [DATA_NEEDED: MSL rating]
Reach — Compliant

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