2ED2106S06FXUMA1 vs 1ED3124MC12HXUMA1 Comparison

Detailed side-by-side comparison of 2ED2106S06FXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED2106S06FXUMA1 1ED3124MC12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) High-side / Low-side (non-inverting)
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns —
Number of Outputs 2 (1 high-side, 1 low-side) 1
Number of Drivers 2 1
Number of Pins 8 —
Package PG-DSO-8-69 (DSO-8) PG-DSO-8 (DSO-8)
Mounting Type Surface Mount Surface Mount
Bootstrap Diode Integrated —
Operating Temperature Range -40C to +125C —
Packaging Tape & Reel —
Output Type Half-Bridge, Non-Inverting —
Channel Type — Single-channel
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Rise Time — 15 ns
Fall Time — 30 ns
Operating Temperature — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
RoHS Status — Compliant

Datasheets & Resources

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