2ED2106S06FXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2106S06FXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2106S06FXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) High-side / Low-side (non-inverting)
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns —
Jumlah Output 2 (1 high-side, 1 low-side) 1
Number of Drivers 2 1
Jumlah Pin 8 —
Paket PG-DSO-8-69 (DSO-8) PG-DSO-8 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Bootstrap Diode Integrated —
Rentang Suhu Kerja -40C to +125C —
Packaging Tape & Reel —
Tipe Output Half-Bridge, Non-Inverting —
Channel Type — Single-channel
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Waktu naik — 15 ns
Waktu Menurun — 30 ns
Suhu Kerja — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
Status RoHS — Compliant

Spek dan Sumber

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