2ED2106S06FXUMA1 vs 1ED3124MC12HXUMA1 比較

詳細並排比較 2ED2106S06FXUMA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 啟用中
Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中

規格比較

參數 2ED2106S06FXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) High-side / Low-side (non-inverting)
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns —
輸出數量 2 (1 high-side, 1 low-side) 1
Number of Drivers 2 1
腳位數 8 —
封裝 PG-DSO-8-69 (DSO-8) PG-DSO-8 (DSO-8)
安裝類型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作溫度範圍 -40C to +125C —
Packaging Tape & Reel —
輸出類型 Half-Bridge, Non-Inverting —
Channel Type — Single-channel
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升時間 — 15 ns
下降時間 — 30 ns
工作溫度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
RoHS 狀態 — Compliant

資料表與資源

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