IRF640NPBF vs IPP600N25N3GXKSA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF640NPBF tarafından Infineon ve IPP600N25N3GXKSA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF640NPBF | IPP600N25N3GXKSA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 250 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 136 W |
| Total Gate Charge (Qg) | 44.7 nC | [DATA_NEEDED: Qg typical value] |
| İşletim Jant Sıcaklığı | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | MOSFET (Metal Oxide) |
| Transistor Türü | N-Channel Enhancement Mode | — |
| Paket | TO-220AB (through-hole, 3-pin) | — |
| Montaj Türü | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Durumu | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Paket / Kas | — | TO-220-3 (PG-TO220-3-1) |
| İşletim Sıcaklığı Aralığı | — | -55C to +175C (junction) |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| Pin Sayısı | — | 3 (Gate, Drain, Source) |