IRF640NPBF vs IPP600N25N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF640NPBF disebabkan oleh Infineon dan IPP600N25N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF640NPBF | IPP600N25N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 250 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 136 W |
| Total Gate Charge (Qg) | 44.7 nC | [DATA_NEEDED: Qg typical value] |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | MOSFET (Metal Oxide) |
| Jenis Transistor | N-Channel Enhancement Mode | — |
| Kemasan | TO-220AB (through-hole, 3-pin) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Kemasan / Case | — | TO-220-3 (PG-TO220-3-1) |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |