IRFS3006TRLPBF vs IRFS3107TRLPBF Perbandingan

Perbandingan bersamaan detil IRFS3006TRLPBF dari Infineon dan IRFS3107TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS3006TRLPBF IRFS3107TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology IR HEXFET (Planar DMOS) IR MOSFET (HEXFET)
Drain-Source Voltage (Vds) 60 V —
Continuous Drain Current (Id) at Tc=25C 195 A —
Pulsed Drain Current (Idm) 270 A —
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm —
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 200 nC 160 nC
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (Pd) at Tc=25C 375 W —
Suhu Hubung Kerja -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Paket D2PAK (TO-263AB), surface mount D2PAK (TO-263AB), 3-pin
Tipe Mounting Surface Mount Surface Mount (Gull Wing)
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant —
Level MSL 1 —
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) —
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) — 195 A at Tc
Continuous Drain Current (ID max) — 230 A
Power Dissipation (PD) — 370 W at Tc
RDS(on) Max — 3 mOhm
Avalanche Energy (EAS) — 300 mJ
Drive Voltage (Max RDS(on)) — 10 V
Configuration — Single with built-in body diode
Suhu Kerja — [DATA_NEEDED: operating temperature range]
Status RoHS — Compliant (PBF / lead-free)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon