IRFS3006TRLPBF vs IRFS3107TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS3006TRLPBF disebabkan oleh Infineon dan IRFS3107TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFS3006TRLPBF IRFS3107TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology IR HEXFET (Planar DMOS) IR MOSFET (HEXFET)
Drain-Source Voltage (Vds) 60 V —
Continuous Drain Current (Id) at Tc=25C 195 A —
Pulsed Drain Current (Idm) 270 A —
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm —
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 200 nC 160 nC
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (Pd) at Tc=25C 375 W —
Suhu Hubungan Operasi -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Kemasan D2PAK (TO-263AB), surface mount D2PAK (TO-263AB), 3-pin
Jenis Pemasangan Surface Mount Surface Mount (Gull Wing)
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant —
Aras MSL 1 —
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) —
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) — 195 A at Tc
Continuous Drain Current (ID max) — 230 A
Power Dissipation (PD) — 370 W at Tc
RDS(on) Max — 3 mOhm
Avalanche Energy (EAS) — 300 mJ
Drive Voltage (Max RDS(on)) — 10 V
Configuration — Single with built-in body diode
Suhu Operasi — [DATA_NEEDED: operating temperature range]
Status RoHS — Compliant (PBF / lead-free)

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