IRLS3034TRLPBF vs IRFZ44NSTRLPBF Perbandingan

Perbandingan bersamaan detil IRLS3034TRLPBF dari Infineon dan IRFZ44NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLS3034TRLPBF IRFZ44NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 195 A —
Pulsed Drain Current (IDM) 343 A [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V, ID=195A 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) 108 nC 42 nC
Power Dissipation (PD) at TC=25°C 375 W —
Rentang Suhu Kerja -40°C to +175°C (TJ) -55C to +175C
Paket D2PAK (TO-263), Surface Mount D2PAK (TO-263)
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) HEXFET
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Shipping Format Tape and Reel, 7-inch (TRL) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 49 A
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-Resistance RDS(on) max — 17.5 mOhm at VGS=10V
Power Dissipation (TC) — 94 W
Power Dissipation (TA) — 3.8 W
Lead-Free (PBF suffix) — Yes

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