IRLS3034TRLPBF vs IRFZ44NSTRLPBF 比較

詳細並排比較 IRLS3034TRLPBF 由 Infineon 與 IRFZ44NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRLS3034TRLPBF IRFZ44NSTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 195 A —
Pulsed Drain Current (IDM) 343 A [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V, ID=195A 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) 108 nC 42 nC
Power Dissipation (PD) at TC=25°C 375 W —
工作溫度範圍 -40°C to +175°C (TJ) -55C to +175C
封裝 D2PAK (TO-263), Surface Mount D2PAK (TO-263)
安裝類型 Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) HEXFET
Lead-Free Yes (PBF suffix) —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) —
Shipping Format Tape and Reel, 7-inch (TRL) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 49 A
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-Resistance RDS(on) max — 17.5 mOhm at VGS=10V
Power Dissipation (TC) — 94 W
Power Dissipation (TA) — 3.8 W
Lead-Free (PBF suffix) — Yes

資料表與資源

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