IRLS3034TRLPBF vs IRFZ44NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLS3034TRLPBF sa pamamagitan ng Infineon at IRFZ44NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLS3034TRLPBF IRFZ44NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 195 A —
Pulsed Drain Current (IDM) 343 A [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V, ID=195A 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) 108 nC 42 nC
Power Dissipation (PD) at TC=25°C 375 W —
Hanay ng Temperature na Operasyon -40°C to +175°C (TJ) -55C to +175C
Packhaging D2PAK (TO-263), Surface Mount D2PAK (TO-263)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) HEXFET
Lead-Free Yes (PBF suffix) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) —
Shipping Format Tape and Reel, 7-inch (TRL) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 49 A
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-Resistance RDS(on) max — 17.5 mOhm at VGS=10V
Power Dissipation (TC) — 94 W
Power Dissipation (TA) — 3.8 W
Lead-Free (PBF suffix) — Yes

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