K4A8G165WB-BCPB vs NT5CC256M16CP-DIB1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCPB disebabkan oleh Samsung Electronics dan NT5CC256M16CP-DIB1 disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCPB | NT5CC256M16CP-DIB1 |
|---|---|---|
| Merek | Samsung Electronics | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| Organisasi | 512M x 16 | 256M x 16 |
| Kadar Data | 2133 Mbps | 1600Mbps (DDR3L-1600) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Suhu Operasi | 0C to +85C | 0C to +95C (Tcase) |
| Kemasan | 96FBGA (TFBGA) | TFBGA-96, 9x13mm, 0.8mm pitch |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Jenis Pemasangan | Surface Mount | — |
| Antaramuka | DDR4 (synchronous, double data rate) | — |
| Bank Groups | DDR4 bank-group architecture | — |
| Status RoHS | Compliant (per Lisleapex listing) | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Tegangan Pemberi Arus | — | 1.35V |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11 |
| Write Latency (CWL) | — | 8 |
| tRCD/tRP | — | 11 |
| Burst Length | — | 8 (BL8) and 4 (BC4) |
| RoHS | — | Compliant |
| Boson Bebas | — | Yes |
| Lead Free | — | Yes |