K4A8G165WB-BCPB vs NT5CC256M16CP-DIB1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCPB sa pamamagitan ng Samsung Electronics at NT5CC256M16CP-DIB1 sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ NakahandaNanya Technology
NT5CC256M16CP-DIB1 - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CP-DIB1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCPB | NT5CC256M16CP-DIB1 |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| Organisasyon | 512M x 16 | 256M x 16 |
| Rate ng Data | 2133 Mbps | 1600Mbps (DDR3L-1600) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | 0C to +95C (Tcase) |
| Packhaging | 96FBGA (TFBGA) | TFBGA-96, 9x13mm, 0.8mm pitch |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Interface | DDR4 (synchronous, double data rate) | — |
| Bank Groups | DDR4 bank-group architecture | — |
| Tindminan RoHS | Compliant (per Lisleapex listing) | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Volte ng Pagbibigay | — | 1.35V |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11 |
| Write Latency (CWL) | — | 8 |
| tRCD/tRP | — | 11 |
| Burst Length | — | 8 (BL8) and 4 (BC4) |
| RoHS | — | Compliant |
| Wala sa Halogen | — | Yes |
| Lead Free | — | Yes |