K4A8G165WB-BCPB vs NT5CC256M16CP-DIB1 比較
詳細並排比較 K4A8G165WB-BCPB 由 Samsung Electronics 與 NT5CC256M16CP-DIB1 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCPB | NT5CC256M16CP-DIB1 |
|---|---|---|
| 品牌 | Samsung Electronics | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| 組織 | 512M x 16 | 256M x 16 |
| 資料速率 | 2133 Mbps | 1600Mbps (DDR3L-1600) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 工作溫度 | 0C to +85C | 0C to +95C (Tcase) |
| 封裝 | 96FBGA (TFBGA) | TFBGA-96, 9x13mm, 0.8mm pitch |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| 安裝類型 | Surface Mount | — |
| 介面 | DDR4 (synchronous, double data rate) | — |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS 狀態 | Compliant (per Lisleapex listing) | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| 供應電壓 | — | 1.35V |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11 |
| Write Latency (CWL) | — | 8 |
| tRCD/tRP | — | 11 |
| Burst Length | — | 8 (BL8) and 4 (BC4) |
| RoHS | — | Compliant |
| 無鹵素 | — | Yes |
| Lead Free | — | Yes |