K4A8G165WB-BIRC vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BIRC | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $32.50 | $6.36 |
| Memory Type | DDR4 SDRAM | SDRAM - DDR3L |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2400 Mbps | — |
| Supply Voltage | 1.2 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Package | 96-FBGA | 96-FBGA (9x14 mm) |
| CAS Latency | 15, 16, 17 | 11 |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| Interface | Pseudo-open-drain | — |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Data Bus Width | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Number of Pins | — | 96 |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |