K4A8G165WB-BIRC vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC β ActiveMicron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIRC | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $39.50 | $6.36 |
| Memory Type | DDR4 SDRAM | SDRAM - DDR3L |
| Density | 8 Gbit | β |
| Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps | β |
| Supply Voltage | 1.2 V | 1.35 V |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Package | 96-ball FBGA | 96-FBGA (9x14 mm) |
| Interface | 16-bit | β |
| DLL Enabled Mode | Yes | β |
| On-Die Termination (ODT) | Yes | β |
| Burst Length | 8, 16 | β |
| Row Address | 16 bits | β |
| Column Address | 10 bits | β |
| Bank Count | 16 banks | β |
| RoHS Compliant | Yes | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Data Bus Width | β | 16 bit |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 13.75 ns |
| Number of Pins | β | 96 |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | [DATA_NEEDED: operating temperature range] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Logic Family | β | CMOS |
| Refresh Interval | β | 7.8 us at 85C |
| CAS Latency | β | 11 |