NT5CB256M16CP-DI vs K4B4G1646E-BYMA Comparison

Detailed side-by-side comparison of NT5CB256M16CP-DI by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5CB256M16CP-DI NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CB256M16CP-DI ✓ Active
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Active

Specification Comparison

Parameter NT5CB256M16CP-DI K4B4G1646E-BYMA
Brand Nanya Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $14.32
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Density 4 Gb 4 Gb
Supply Voltage 1.35 V (DDR3L) 1.35 V (1.28 V to 1.575 V)
Data Rate 1600 Mbps/pin (max) 1866 Mbps/pin
Package TFBGA-96 FBGA-96
Number of Banks 8 —
CAS Latency (CL) 5, 6, 7, 8, 9, 10, 11 —
Write Latency (CWL) 5, 6, 7, 8, 9 —
Additive Latency 0-13 —
Operating Temperature Range -40°C to +95°C (industrial), -40°C to +105°C (automotive) —
RoHS Compliant Compliant
Lead-Free Yes —
Differential Clock Input Yes (CK, CK#) —
On-Die Termination (ODT) Yes —
Clock Frequency — 933 MHz
Operating Temperature — 0°C to +95°C
Operating Current — 14 mA
Standby Current — 2 mA, 3 mA
Mounting Type — Surface Mount
CAS Latency — [DATA_NEEDED: CAS Latency]
Burst Length — [DATA_NEEDED: Burst Length]
Number of Pins — 96

Datasheets & Resources

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