M29W400FB55N3F vs M29W400FB55N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W400FB55N3F disebabkan oleh Micron Technology dan M29W400FB55N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ AktifPengandingan Spesifikasi
| Parametr | M29W400FB55N3F | M29W400FB55N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash (parallel) |
| Saiz Ingatan | 4 Mbit | — |
| Organisasi | 512K x8 / 256K x16 | 512K x 8 bit / 256K x 16 bit |
| Antaramuka | Parallel (asynchronous) | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Program/Erase Supply | Single 2.7 V to 3.6 V | — |
| Byte/Word Select | BYTE# pin | — |
| Block Architecture | Boot block with hardware sector protection | 19 memory blocks, 1 boot block (bottom, FB) |
| Program Suspend/Erase Suspend | Supported | — |
| Kemasan | 48-pin TSOP I (12 x 20 mm) | 48-TSOP I, 12 x 20 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tray |
| Lead-Free / RoHS | Yes (F suffix = lead-free RoHS-compliant) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase cycles per block] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| Density | — | 4 Mbit (4194 kbits) |
| Programming Time | — | 10 us per byte/word typical |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| Status RoHS | — | Compliant |
| Speed Grades in Family | — | 55 ns, 70 ns |