M29W400FB55N3F vs M29W400FB55N3E Perbandingan
Perbandingan bersamaan detil M29W400FB55N3F dari Micron Technology dan M29W400FB55N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29W400FB55N3F | M29W400FB55N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (parallel) |
| Ukuran Memori | 4 Mbit | — |
| Organisasi | 512K x8 / 256K x16 | 512K x 8 bit / 256K x 16 bit |
| Antarmuka | Parallel (asynchronous) | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Program/Erase Supply | Single 2.7 V to 3.6 V | — |
| Byte/Word Select | BYTE# pin | — |
| Block Architecture | Boot block with hardware sector protection | 19 memory blocks, 1 boot block (bottom, FB) |
| Program Suspend/Erase Suspend | Supported | — |
| Paket | 48-pin TSOP I (12 x 20 mm) | 48-TSOP I, 12 x 20 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tray |
| Lead-Free / RoHS | Yes (F suffix = lead-free RoHS-compliant) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase cycles per block] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| Density | — | 4 Mbit (4194 kbits) |
| Programming Time | — | 10 us per byte/word typical |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| Status RoHS | — | Compliant |
| Speed Grades in Family | — | 55 ns, 70 ns |