M29W400FB55N3F vs M29W400FB55N3E 比較
詳細並排比較 M29W400FB55N3F 由 Micron Technology 與 M29W400FB55N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ 啟用中規格比較
| 參數 | M29W400FB55N3F | M29W400FB55N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash (parallel) |
| 記憶體容量 | 4 Mbit | — |
| 組織 | 512K x8 / 256K x16 | 512K x 8 bit / 256K x 16 bit |
| 介面 | Parallel (asynchronous) | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Program/Erase Supply | Single 2.7 V to 3.6 V | — |
| Byte/Word Select | BYTE# pin | — |
| Block Architecture | Boot block with hardware sector protection | 19 memory blocks, 1 boot block (bottom, FB) |
| Program Suspend/Erase Suspend | Supported | — |
| 封裝 | 48-pin TSOP I (12 x 20 mm) | 48-TSOP I, 12 x 20 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tray |
| Lead-Free / RoHS | Yes (F suffix = lead-free RoHS-compliant) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase cycles per block] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| Density | — | 4 Mbit (4194 kbits) |
| Programming Time | — | 10 us per byte/word typical |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| RoHS 狀態 | — | Compliant |
| Speed Grades in Family | — | 55 ns, 70 ns |