H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix
Référence : H5AN8G6NAFR-PBC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.85 | $4,85 |
| 10 | $4.55 | $45,50 |
| 100 | $4.15 | $415,00 |
| 500 | $3.85 | $1 925,00 |
| 1 000 | $3.55 | $3 550,00 |
H5AN8G6NAFR-PBC Présentation
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a class of volatile memory that transfers data on both the rising and falling edges of the clock signal. Within the memory hierarchy, DDR4 SDRAM sits in the main-memory tier between CPU caches (SRAM) and storage (NAND flash), delivering the high bandwidth and large density that modern processors require. JEDEC-standardized DDR4 lowered the interface voltage from DDR3's 1.5V to 1.2V and introduced the VPP rail, bank groups, and higher prefetch efficiency.
Key features of the H5AN8G6NAFR family include large 8Gb (8 gigabit) density per die, a wide DDR4 data-rate window covering 1600, 1866, 2133, and 2400 MT/s speed bins (per the speed bin tables in the manufacturer datasheet), auto/self-refresh support, and the x16 organization that simplifies 16-bit and 32-bit memory bus designs without byte-lane complexity. The separate VPP input supports the wordline boosting scheme unique to DDR4, reducing core power versus DDR3.
The device uses SK hynix's CMOS DRAM process with a DLL-on operating mode; speed bin tables are valid only when Geardown Mode is disabled, as stated in the datasheet. Internal bank-group architecture enables tightly scheduled commands such as CAS-to-CAS (tCCD_S/tCCD_L) while maintaining signal integrity on the CA and DQ buses.
Typical applications include main memory for embedded x86 and ARM platforms, industrial PCs, networking equipment, set-top boxes, and any main-memory application requiring large density and high bandwidth, where two x16 devices can form a 32-bit DDR4 channel.
Design consideration: DDR4 routing requires length-matched fly-by CA routing and on-die termination (ODT) configuration via the mode register set; VPP must be present before or with VDD to avoid reliability stress.
This page synthesizes datasheet data, drop-in alternatives, and design guidance not consolidated in the manufacturer datasheet alone.
Alternatives de remplacement direct pour H5AN8G6NAFR-PBC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G6NAFR-PBC (même facteur de forme et même empreinte) — différant par Package, Data Rate, Interface, Operating Temperature, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G6NAFR-UHC
✅ Remplacement direct✓ En stock
$5.7422 / unité
Voir la fiche technique →H5AN8G6NCJR-VKC
✅ Remplacement direct✓ En stock
$60 / unité
Voir la fiche technique →H5AN8G6NDJR
✅ Remplacement direct✓ En stock
$35 / unité
Voir la fiche technique →MT40A512M16JY-075E
✅ Remplacement direct✓ En stock
$30.5 / unité
Voir la fiche technique →H5AN8G8NAFR-PBC
✅ Remplacement direct✓ En stock
$2.2 / unité
Voir la fiche technique →H5AN8G6NAFR-PBC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gbit |
| Organisation de la mémoire | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V |
| Type d'interface | DDR4 (parallel, double data rate) |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | Auto / Self Refresh |
| DLL | DLL ON mode for speed bin operation |
| Clock | Differential clock (CK/CK#) |
| Boîtier | TFBGA-96 (rectangular) |
| Number of Terminals | 96 |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant (Lead-Free & Halogen-Free) |
| Composition | CMOS |
Guide de configuration des broches du H5AN8G6NAFR-PBC tfbga-96 (rectangular)
Configuration des broches du H5AN8G6NAFR-PBC (boîtier tfbga-96 (rectangular)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN8G6NAFR-PBC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN8G6NAFR-PBC convient pour 6 applications: Embedded Main Memory for Industrial PCs, Networking and Telecom Equipment, Set-Top Boxes and Smart TV Platforms, Automotive Infotainment and Displays, Test and Measurement Instrumentation, Edge AI and Vision Modules.
Embedded Main Memory for Industrial PCs
The H5AN8G6NAFR-PBC provides 8Gb of DDR4 main memory per device for industrial PCs, HMI panels, and edge controllers running memory-hungry Linux or real-time workloads. Its 512M x16 organization lets two devices form a 32-bit channel or four devices a 64-bit channel, minimizing component count versus x8 alternatives. The 1.2V VDD/VDDQ interface cuts I/O power roughly 20% versus DDR3 at comparable bandwidth, reducing thermal load in fanless enclosures, while auto/self-refresh supports Suspend-to-RAM power strategies. Its RoHS-compliant, lead-free and halogen-free construction fits standard industrial qualification flows, and the DDR4-1600 to 2400 speed-bin range lets one PCB cover multiple CPU performance tiers by changing only firmware training tables.
Recommandé
Networking and Telecom Equipment
Routers, switches, and 5G small-cell platforms require large packet buffers and high memory bandwidth; the H5AN8G6NAFR-PBC's 8Gb density and up to DDR4-2400 data rate supply the throughput for line-rate packet processing. The x16 organization suits 16-bit and 32-bit control-plane memory buses common in network processors and ARM-based management CPUs. DLL-on operation and bank-group timing support dense command streams typical of buffer management, while per-byte DM masks simplify store-and-forward buffer implementations. Because telecom racks demand long service life, dual-sourcing with Micron's MT40A512M16JY-075E on the same 96-ball footprint protects against DRAM supply cycles without PCB respin, and the 1.2V interface lowers per-device power across the dozens of DRAMs in a chassis.
Recommandé
Set-Top Boxes and Smart TV Platforms
Media-soC set-top boxes and smart TVs typically use 32-bit DDR4 channels; a pair of H5AN8G6NAFR-PBC devices delivers 2 GB of main memory for 4K video decoding, graphics, and applications. The x16 organization matches these SoC memory controllers directly, and the 1.2V interface reduces total platform power - important in always-on consumer devices subject to energy regulations. Auto/self-refresh enables low-power standby states needed for instant-on user experiences. Because consumer BOMs are cost-driven, the shared 96-ball footprint with SK hynix's H5AN8G6NAFR-UHC and newer CJR/DJR dies allows procurement to migrate across grades and generations with no PCB change, protecting production continuity through DRAM market fluctuations.
Recommandé
Automotive Infotainment and Displays
Digital cockpits and infotainment SoCs use DDR4 DRAM for graphics buffers and navigation databases; the H5AN8G6NAFR-PBC's 8Gb capacity supports multi-display rendering pipelines. Two x16 devices on a 32-bit channel provide 2 GB with bandwidth up to the DDR4-2400 bin, sufficient for HD map rendering and rear-seat streaming. The 1.2V rail simplifies integration with automotive PMIC DDR4 rails, and the separate 2.5V VPP input matches standard automotive DDR4 power architectures. For qualification, engineers should confirm the operating temperature grade for the specific suffix and consider SK hynix automotive-grade DDR4 variants where AEC-Q100 alignment is required, using the shared F-package footprint to keep the design portable across grades.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers capture large waveform datasets into main memory; the H5AN8G6NAFR-PBC's 8Gb density per device supports deep-capture memory pools of 4-16 GB built from a handful of components. A 64-bit channel of four x16 devices achieves high sustained bandwidth for streaming acquisition data, while the 1.2V DDR4 interface and self-refresh mode manage instrument power budgets in portable formats. Deterministic initialization via RESET# and standard JEDEC mode-register programming eases bring-up on FPGA or ASIC memory controllers. Instruments benefit from dual-sourcing on the same footprint - qualifying both this SK hynix device and Micron's MT40A512M16JY-075E protects long-lifecycle product lines against DRAM end-of-life and allocation cycles.
Recommandé
Edge AI and Vision Modules
Edge AI accelerator modules and smart-camera SoCs need 1-4 GB of DDR4 for model weights, frame buffers, and intermediate feature maps; a 32-bit channel built from two H5AN8G6NAFR-PBC devices provides 2 GB at up to DDR4-2400 bandwidth, feeding CNN inference pipelines at the frame rates vision workloads demand. The x16 organization matches typical vision-SoC controllers, and the compact 96-ball TFBGA fits the tight module footprints of M.2 and SO-DIMM-style edge compute cards. Auto/self-refresh supports aggressive duty-cycling in battery-powered cameras, while RoHS-compliant lead-free construction meets global IoT product compliance. The shared footprint with CJR/DJR successor dies gives module vendors a longevity path without layout changes.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G6NAFR-PBC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC | H5AN8G6NDJR | MT40A512M16JY-075E | H5AN8G8NAFR-PBC |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 - same | TFBGA-96 - same | TFBGA-96 - same | FBGA-96 - same footprint class | TFBGA-96 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology | SK hynix |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 1G x 8 |
| VDD/VDDQ | 1.20 V +/- 0.06 V | 1.20 V | 1.20 V | 1.20 V | 1.20 V | 1.20 V |
| Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh |
| RoHS / Halogen-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
Principaux différenciateurs
- x16 organization halves device count per bus (vs H5AN8G8NAFR-PBC)
- Full datasheet-documented speed-bin range (vs H5AN8G6NAFR-UHC)
- Dual-source continuity on one footprint (vs MT40A512M16JY-075E)
Notes de conception
Provide three rails for the H5AN8G6NAFR-PBC: VDD and VDDQ at 1.20V +/- 0.06V and VPP at 2.5V +0.25/-0.125V, per the datasheet absolute ratings (Rev. 1.2, Jul. 2017). Sequence VPP on together with or before VDD to avoid unpowered wordline-bias stress. VPP draws little dynamic current but must stay regulated; VDDQ sees bursty I/O current, so bulk plus high-frequency ceramic decoupling near each device is mandatory. Use a DDR4-capable PMIC with VTT termination tracking (VDDQ/2) for the address/command bus.
Route DDR4 in fly-by topology for CK/CK#, CKE, CS#, RAS#/CAS#/WE#, ODT, and CA[5:0], with series-damped termination to VTT; keep CA skew within the controller's spec. Match DQ[15:0], DQS/DQS#, and DM per byte lane within +/- 5 mils and control impedance to 40-50 ohms single-ended. Both speed bin tables in the datasheet are valid only with DLL ON and Geardown Mode disabled, so confirm controller mode-register settings match the layout's target bin. Follow the ballout table in the SK hynix datasheet exactly; do not mirror the footprint from a x8 device without verification.
When substituting speed grades (for example H5AN8G6NAFR-UHC in place of -PBC, or cross-brand MT40A512M16JY-075E), do not assume one firmware training profile fits all: each grade and die generation (CJR/DJR vs the original AFR) has different CL/CWL, tRFC, and ODT optima. Re-run read/write leveling and verify at temperature extremes. Also note the datasheet reserves the right to change products or specifications without notice - re-verify PCN/EOL status periodically and qualify a second source to de-risk commodity DRAM allocation cycles.
Informations de conformité
Datasheet description states Lead-Free & Halogen-Free (RoHS Compliant) for the H5AN8G6NAFR-PBC. REACH and conflict-minerals status not stated in provided data.
