K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Référence : K4B4G1646D-BHMA ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $4.1 | $41,00 |
| 100 | $3.7 | $370,00 |
| 500 | $3.3 | $1 650,00 |
| 1 000 | $2.9 | $2 900,00 |
K4B4G1646D-BHMA Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 1866 Mbps data rate, and 1.35V operation. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto refresh and self refresh modes, and is compatible with JEDEC DDR3L standards. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BHMA uses a D-die process, which offers improved performance and power characteristics compared to earlier dies. It supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for signal integrity. The device operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial applications.
Typical applications include personal computing devices, mobile phones, tablets, digital cameras, printers, networking equipment, industrial machinery, medical devices, automotive electronics, and solid-state drives. Its low voltage and high density make it ideal for power-sensitive portable devices and high-performance computing platforms.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. Also, verify the timing parameters for your specific application, as DDR3L timing is critical for reliable operation.
Alternatives de remplacement direct pour K4B4G1646D-BHMA — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BHMA (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BMK0
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646D-BMK0
✅ Remplacement direct✓ En stock
$5.9 / unité
Voir la fiche technique →K4B4G1646D-BPH90
✅ Remplacement direct✓ En stock
$7.6 / unité
Voir la fiche technique →K4B4G1646D-BFMA
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →H5TC4G63AFR-PBA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.9773 / unité
Voir la fiche technique →IS43TR16256AL-125KBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →K4B4G1646D-BHMA Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Débit de données | 1866 Mbps |
| Tension d'alimentation | 1.35 V (1.283 V to 1.45 V) |
| Boîtier | 96-ball FBGA |
| Température de fonctionnement | -40°C to +95°C (TC) |
| Latence CAS | 13 (at 1866 Mbps) |
| Burst Length | 8 and 4 |
| Number of Terminals | 96 |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Die Version | D-die |
| Refresh Mode | Auto and Self Refresh |
Configuration des broches de K4B4G1646D-BHMA
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDD — Power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | VSSQ — DQ ground |
| Broche C3 | VDDQ — DQ power supply |
| Broche C4 | VSSQ — DQ ground |
| Broche C5 | VDDQ — DQ power supply |
| Broche C6 | VSSQ — DQ ground |
| Broche C7 | VDDQ — DQ power supply |
| Broche C8 | VSSQ — DQ ground |
| Broche C9 | VDDQ — DQ power supply |
| Broche C10 | VSSQ — DQ ground |
| Broche C11 | VDDQ — DQ power supply |
| Broche C12 | VSSQ — DQ ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto-precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | BA0 — Bank address 0 |
| Broche E5 | BA1 — Bank address 1 |
| Broche E6 | BA2 — Bank address 2 |
| Broche E7 | RAS# — Row address strobe |
| Broche E8 | CAS# — Column address strobe |
| Broche E9 | WE# — Write enable |
| Broche E10 | CS# — Chip select |
| Broche E11 | CKE — Clock enable |
| Broche E12 | ODT — On-die termination |
| Broche F1 | CK — Clock positive |
| Broche F2 | CK# — Clock negative |
| Broche F3 | VDD — Power supply |
| Broche F4 | VSS — Ground |
| Broche F5 | VDD — Power supply |
| Broche F6 | VSS — Ground |
| Broche F7 | VDD — Power supply |
| Broche F8 | VSS — Ground |
| Broche F9 | VDD — Power supply |
| Broche F10 | VSS — Ground |
| Broche F11 | VDD — Power supply |
| Broche F12 | VSS — Ground |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DM1 — Data mask 1 |
| Broche G3 | DQS0 — Data strobe 0 |
| Broche G4 | DQS0# — Data strobe 0 complement |
| Broche G5 | DQS1 — Data strobe 1 |
| Broche G6 | DQS1# — Data strobe 1 complement |
| Broche G7 | DQS2 — Data strobe 2 |
| Broche G8 | DQS2# — Data strobe 2 complement |
| Broche G9 | DQS3 — Data strobe 3 |
| Broche G10 | DQS3# — Data strobe 3 complement |
| Broche G11 | VDD — Power supply |
| Broche G12 | VSS — Ground |
| Broche H1 | VSS — Ground |
| Broche H2 | VDD — Power supply |
| Broche H3 | VSS — Ground |
| Broche H4 | VDD — Power supply |
| Broche H5 | VSS — Ground |
| Broche H6 | VDD — Power supply |
| Broche H7 | VSS — Ground |
| Broche H8 | VDD — Power supply |
| Broche H9 | VSS — Ground |
| Broche H10 | VDD — Power supply |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply |
Applications typiques
K4B4G1646D-BHMA convient pour 6 applications: Embedded Systems, Networking Equipment, Mobile Devices, Industrial Machinery, Medical Devices, Automotive Electronics.
Embedded Systems
The K4B4G1646D-BHMA is ideal for embedded systems requiring high-density, low-power memory. Its 4Gb density and 1.35V operation reduce power consumption, making it suitable for industrial controllers, IoT gateways, and single-board computers. The 1866 Mbps data rate ensures fast data processing, while the 96FBGA package fits compact PCB designs. According to Samsung, it is designed for high-density memory applications in embedded systems.
Recommandé
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4B4G1646D-BHMA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, and the 1.35V operation reduces power in always-on network devices. The 96FBGA package allows for dense memory arrays on network line cards. According to Samsung, it is suitable for networking equipment.
Recommandé
Mobile Devices
The K4B4G1646D-BHMA is well-suited for mobile devices like smartphones and tablets due to its low 1.35V operation, which extends battery life. The 4Gb density provides ample memory for multitasking and multimedia applications. The 1866 Mbps data rate ensures smooth performance for apps and games. Its compact 96FBGA package is ideal for space-constrained mobile PCBs. According to Samsung, it is used in mobile phones and tablets.
Recommandé
Industrial Machinery
The K4B4G1646D-BHMA operates over -40°C to +95°C, making it suitable for industrial machinery that experiences extreme temperatures. Its high density and 1866 Mbps data rate support real-time control and data logging. The 1.35V operation reduces power in industrial systems. The 96FBGA package provides reliable solder joints for harsh environments. According to Samsung, it is used in industrial machinery.
Recommandé
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BHMA provides reliable, high-density memory for data acquisition and processing. Its low 1.35V operation is critical for battery-powered portable medical devices. The 1866 Mbps data rate supports real-time signal processing. The 96FBGA package is compact for medical device PCBs. According to Samsung, it is used in medical devices.
Recommandé
Automotive Electronics
The K4B4G1646D-BHMA is suitable for automotive electronics such as infotainment systems and ADAS, where high-density memory and low power are essential. Its wide temperature range (-40°C to +95°C) meets automotive requirements. The 1866 Mbps data rate supports high-bandwidth applications like navigation and camera processing. The 96FBGA package is robust for automotive environments. According to Samsung, it is used in automotive electronics.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BHMA — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BMK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Principaux différenciateurs
- D-die process for improved performance (vs K4B4G1646E-BMK0)
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- Wide temperature range (vs IS43TR16256AL-125KBL)
Notes de conception
For reliable operation at 1866 Mbps, follow the PCB layout guidelines in the Samsung datasheet. Ensure proper impedance matching for DQ, DQS, and address/control lines. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within 50 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins to minimize power supply noise.
The K4B4G1646D-BHMA operates at 1.35V, which is lower than standard DDR3 (1.5V). Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. According to the datasheet, the supply voltage range is 1.283V to 1.45V. Monitor the power supply for droop during high-speed switching.
The K4B4G1646D-BHMA operates over -40°C to +95°C. For high-density memory arrays, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96FBGA package has a thermal resistance that depends on PCB copper area. Use thermal vias under the package to improve heat dissipation. According to Samsung, the device is suitable for industrial temperature ranges.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory ICs.
