K4A8G165WB-BCTD - 8Gb DDR4 SDRAM x16 | Samsung
Référence : K4A8G165WB-BCTD ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $48.62 | $48,62 |
| 10 | $45.12 | $451,20 |
| 100 | $42 | $4 200,00 |
| 500 | $39.5 | $19 750,00 |
| 1 000 | $37 | $37 000,00 |
K4A8G165WB-BCTD Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps/pin while operating at 1.2V, a 20% reduction from DDR3's 1.5V. DDR4 is the industry standard for main memory in servers, desktops, laptops, and increasingly in embedded applications such as networking and industrial computing.
Key features include a 512M x 16 organization, 2666 Mbps data rate, 1.2V power supply, and support for JEDEC-standard features like on-die termination (ODT), ZQ calibration, and auto-precharge. The device also includes a data mask function and supports a temperature range of 0°C to +95°C (TC), making it suitable for a wide range of commercial and industrial environments.
The K4A8G165WB-BCTD is built on Samsung's advanced B-die process technology, which is known for its high speed and low latency. The 96-ball FBGA package provides excellent signal integrity and thermal performance, while the 1.2V operation reduces power consumption by up to 25% compared to DDR3, making it ideal for power-sensitive applications.
Typical applications include high-performance computing, servers, networking equipment, and embedded systems that require high memory bandwidth and capacity. The device is also used in graphics cards, set-top boxes, and automotive infotainment systems.
When designing with this component, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a reference voltage (VREF) of 0.6V.
Alternatives de remplacement direct pour K4A8G165WB-BCTD — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G165WB-BCTD (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature, Interface, Memory Size.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G165WC-BCTD
✓ En stock
$41.2 / unité
Voir la fiche technique →K4A8G165WB-BCRC
✓ En stock
$12.57 / unité
Voir la fiche technique →MT41K256M16TW-107
✓ En stock
$14.1 / unité
Voir la fiche technique →H5TC4G63CFR-PBA
✓ En stock
$6.23 / unité
Voir la fiche technique →NT5CC256M16CP-DIB1
✓ En stock
$6 / unité
Voir la fiche technique →K4A8G165WB-BCTD Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x 16 |
| Total Density | 8 Gb |
| Débit de données | 2666 Mbps/pin (PC4-2666) |
| Tension d'alimentation | 1.2 V |
| Boîtier | 96-ball FBGA |
| Température de fonctionnement | 0°C to +95°C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
Configuration des broches de K4A8G165WB-BCTD
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | VSS — Ground |
| Broche B1 | DQ0 — Data input/output 0 |
| Broche B2 | DQ1 — Data input/output 1 |
| Broche C1 | DQS0 — Data strobe 0 |
| Broche C2 | DQS0_n — Data strobe 0 complement |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche E1 | BA0 — Bank address 0 |
| Broche E2 | BA1 — Bank address 1 |
| Broche F1 | CS_n — Chip select (active low) |
| Broche F2 | RAS_n — Row address strobe (active low) |
Applications typiques
K4A8G165WB-BCTD convient pour 6 applications: High-Performance Computing, Networking Equipment, Embedded Systems, Graphics and Gaming, Automotive Infotainment, Data Center Storage.
High-Performance Computing
The K4A8G165WB-BCTD delivers 2666 Mbps data rate and 8Gb density, making it ideal for servers and workstations that require high memory bandwidth for data-intensive workloads. Its 1.2V operation reduces power consumption, and the 96-ball FBGA package supports high-density DIMM designs. In a server, it can be used in RDIMM or UDIMM modules to provide the capacity and speed needed for virtualization, database processing, and scientific computing.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the K4A8G165WB-BCTD provides the high-speed memory required for packet buffering and routing tables. Its 2666 Mbps data rate ensures low latency, while the 1.2V supply helps meet strict power budgets. The device's on-die termination and ZQ calibration improve signal integrity in high-speed PCB designs, making it suitable for 100GbE and beyond.
Recommandé
Embedded Systems
For embedded applications like industrial PCs, medical devices, and test equipment, the K4A8G165WB-BCTD offers a balance of performance and power efficiency. Its 0°C to +95°C temperature range covers most commercial environments, and the 96-ball FBGA package is suitable for compact designs. The device supports features like auto-precharge and data mask, which are useful in real-time control systems.
Recommandé
Graphics and Gaming
The K4A8G165WB-BCTD is used in graphics cards and gaming consoles to provide high-bandwidth memory for rendering and texture storage. Its 2666 Mbps data rate and 8Gb capacity support high-resolution textures and complex scenes. The low power consumption of DDR4 helps manage thermal loads in compact gaming devices, and the B-die's low latency is beneficial for frame pacing.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the K4A8G165WB-BCTD provides the memory needed for navigation, multimedia, and connectivity features. While not AEC-Q100 qualified, it can be used in non-safety-critical infotainment modules where the operating temperature range of 0°C to +95°C is acceptable. Its high bandwidth supports smooth video playback and responsive user interfaces.
Recommandé
Data Center Storage
In data center storage systems, the K4A8G165WB-BCTD is used in cache memory for SSDs and storage controllers. Its high data rate and low latency improve I/O performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's reliability features, such as on-die termination, ensure stable operation in high-speed interfaces.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G165WB-BCTD — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G165WC-BCTD | K4A8G165WB-BCRC | MT41K256M16TW-107 | H5TC4G63CFR-PBA | NT5CC256M16CP-DIB1 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Samsung B-die process (vs K4A8G165WC-BCTD)
- Wide availability and ecosystem support (vs MT41K256M16TW-107)
- Proven reliability in high-speed designs (vs H5TC4G63CFR-PBA)
Notes de conception
For high-speed DDR4 routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Keep trace lengths matched within +/- 10 mils for each byte lane. Use ground planes beneath all signal layers to minimize crosstalk and ensure signal integrity.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the package. Use a 10uF bulk capacitor on the VDD rail. The VREF voltage should be bypassed with a 0.1uF capacitor to ground. Ensure the power supply has low impedance at high frequencies to maintain stable operation.
The K4A8G165WB-BCTD operates up to +95°C TC. In high-density designs, ensure adequate airflow or a heatsink to keep the case temperature within limits. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA), so calculate power dissipation based on your data rate and activity factor.
Informations de conformité
RoHS compliance is assumed based on Samsung's general compliance, but not explicitly stated in the provided data. AEC-Q100 not applicable as this is not an automotive-grade part.
