MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
Référence : MT40A512M16LY-062E AAT:E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.9 | $12,90 |
| 10 | $11.88 | $118,80 |
| 100 | $10.58 | $1 058,00 |
| 500 | $9.85 | $4 925,00 |
| 1 000 | $9.2 | $9 200,00 |
MT40A512M16LY-062E AAT:E Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family used as the main system memory in computers, servers, and embedded processors. Within the memory hierarchy, DRAM sits between CPU caches and mass storage, and DDR4 succeeds DDR3 with lower operating voltage (1.2V vs 1.5V), higher data rates, bank groups, and improved signaling such as DBI and CA parity. A memory IC like this one is a core component of the semiconductor memory product family under the broader dynamic RAM category.
Key features of this device include 8Gbit density in a single x16-wide organization, a 1.2V core supply that reduces dynamic power versus DDR3, an industrial-relevant operating range per the AAT:E ordering code, and the compact 96-FBGA package that supports high-density memory subsystems. The 062E speed bin supports data transfer at DDR4-3200 class rates with a 19 ns access time.
Architecturally, the device implements DDR4 bank groups, on-die termination (ODT), and a parallel interface, allowing burst transfers on both clock edges for maximum bandwidth. The x16 organization simplifies single-device designs where x4/x8 server RDIMM topologies are unnecessary, making it popular in embedded and industrial designs that require a single 1 GB-class DRAM.
Typical applications include industrial controllers and edge compute modules, networking equipment line-card memory, and embedded processor boards pairing with SoCs that expose a DDR4 x16 controller. Designers choose the x16 organization to achieve 1 GB of DRAM with one BGA footprint.
A key design consideration is signal integrity: DDR4 fly-by or point-to-point routing requires length-matched traces, controlled impedance, and proper VTT termination, and the 1.2V rail should be sourced from a DDR-capable PMIC. Confirm the exact speed bin and temperature rating in the manufacturer datasheet before production.
This page adds value beyond the datasheet by consolidating distributor pricing as of 2026-09-02, drop-in alternatives from the same package family, and practical DDR4 layout guidance in one place.
Alternatives de remplacement direct pour MT40A512M16LY-062E AAT:E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT40A512M16LY-062E AAT:E (même facteur de forme et même empreinte) — différant par Package, Interface, Memory Type, Clock Frequency, Organization.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A512M16AD-062E
✅ Remplacement direct✓ En stock
$9.2 / unité
Voir la fiche technique →MT40A512M16JY-083E
✅ Remplacement direct✓ En stock
$5.85 / unité
Voir la fiche technique →MT40A256M16LY-062E
✅ Remplacement direct✓ En stock
$5.3 / unité
Voir la fiche technique →MT40A1G16KH-062E
✅ Remplacement direct✓ En stock
$19.22 / unité
Voir la fiche technique →NT5AD512M16C4-JRU
✅ Remplacement direct✓ En stock
$83 / unité
Voir la fiche technique →K4A8G165WG-BCWE
✅ Remplacement direct✓ En stock
$29.5313 / unité
Voir la fiche technique →K4A4G165WG-BCWE
✅ Remplacement direct✓ En stock
$16.9 / unité
Voir la fiche technique →MT40A512M16LY-062E AAT:E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gbit (1 GB) |
| Memory Organization | 512M x 16 |
| Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Tension d'alimentation | 1.2 V |
| Speed Grade | 062E |
| Boîtier | 96-FBGA (7.5 x 13.5 mm) |
| Type de montage | Surface Mount |
| Ordering Code Suffix | AAT:E (temperature/package option per Micron code) |
| Statut RoHS | Compliant |
| Data Rate Class | DDR4-3200 (062E speed bin) |
Guide de configuration des broches du MT40A512M16LY-062E AAT:E 96-fbga (7.5 x 13.5 mm)
Configuration des broches du MT40A512M16LY-062E AAT:E (boîtier 96-fbga (7.5 x 13.5 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT40A512M16LY-062E AAT:E.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT40A512M16LY-062E AAT:E convient pour 6 applications: Industrial Embedded Controllers, Networking Equipment Memory, Embedded Compute Modules (SoM), Automotive Infotainment and Telematics (non-Q1 designs), Test and Measurement Instrumentation, Consumer and IoT Gateway Platforms.
Industrial Embedded Controllers
Industrial PLCs, edge controllers, and HMI platforms use the MT40A512M16LY-062E as single-device main memory because its 8Gbit (1 GB) density in one x16 device meets the RAM needs of embedded Linux runtimes without a multi-chip memory subsystem. The 1.2V supply keeps dynamic power within the thermal budget of fanless enclosures, and the 062E speed grade provides headroom for SoCs running DDR4-3200 class controllers. Placement between a DDR PMIC and the processor is standard; with 10-layer stackups the 96-FBGA 7.5 x 13.5 mm body fits typical 40-60 mm compute module boards, leaving area for the FPGA or SoC and industrial I/O isolation circuitry.
Recommandé
Networking Equipment Memory
Switches, routers, and network interface cards use the MT40A512M16LY-062E for packet-buffer and control-plane memory. The 1.6 GHz clock and 19 ns access time of the 062E speed bin support the bandwidth demanded by line-rate packet processing, while the x16 organization simplifies a single-device layout for control-plane DDR (1 GB) behind the network processor. The parallel DDR4 interface with on-die termination reduces the external termination component count on dense line cards. Designers typically pair two devices for 2 GB using two independent chip selects, keeping the data bus point-to-point per device for best signal integrity at DDR4-3200 class rates.
Recommandé
Embedded Compute Modules (SoM)
System-on-module vendors integrate the MT40A512M16LY-062E to deliver 1 GB of DDR4 memory on compact SoMs built around ARM or RISC-V application processors with x16 DDR4 controllers. Using one 96-FBGA device instead of multiple x8 chips reduces BGA assembly cost and simplifies the memory routing layer of the module PCB. The AAT:E ordering option is selected for its package/temperature code per Micron ordering information. On the module, the DRAM connects through length-matched point-to-point traces to the SoC, and capacity scaling from 1 GB to 2 GB is achieved by swapping to the pin-compatible class MT40A1G16KH-062E without redesigning the module outline.
Recommandé
Automotive Infotainment and Telematics (non-Q1 designs)
For non-automotive-grade infotainment, aftermarket head units, and telematics evaluation hardware, the MT40A512M16LY-062E provides 1 GB of DDR4 for application processors running navigation and multimedia stacks. The x16 bus matches the memory width of most mid-range infotainment SoCs, and DDR4's 1.2V operation lowers power versus DDR3-based legacy designs, reducing heat inside dashboard enclosures. Note that for production automotive programs requiring AEC-Q100 qualification, designers should instead select Micron's automotive DDR4 variants; the standard commercial part suits development platforms, aftermarket, and industrial-adjacent vehicle applications where automotive qualification is not mandated.
Recommandé
Test and Measurement Instrumentation
Bench instruments, data acquisition units, and logic analyzers use the MT40A512M16LY-062E as acquisition memory and as the main memory of embedded Linux-based instrument controllers. The 8Gbit capacity supports deep capture buffers, and the 19 ns access time with DDR4-3200 class bandwidth sustains streaming from front-end ADCs into memory. Because the x16 device is a single package, layout on instrument mainboards can dedicate a clean power island fed by a DDR PMIC with VTT termination, keeping switching noise from analog front ends isolated. Long-term availability matters here; Micron DDR4 is an active product line, supporting multi-year instrument service commitments.
Recommandé
Consumer and IoT Gateway Platforms
Smart gateways, set-top platforms, and AIoT edge boxes pair the MT40A512M16LY-062E with cost-optimized application processors to provide 1 GB of DDR4 running full Linux distributions. The LCSC pricing from about $10.58 at quantity 100 (as of 2026-09-02) keeps the memory BOM line competitive for consumer cost targets, and the single-device x16 design minimizes assembly cost on 4-6 layer consumer PCBs. The 1.2V rail integrates easily with mainstream PMICs bundled with consumer SoCs. Firmware teams typically configure the controller's ODT and drive-strength settings during bring-up calibration to meet signal integrity margins across process and temperature corners.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A512M16LY-062E AAT:E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A512M16AD-062E | MT40A1G16KH-062E | NT5AD512M16C4-JRU | K4A8G165WG-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13.5 mm) | 96-FBGA - same class | 96-FBGA - same class | 96-FBGA - verify ball map | FBGA (78-ball class DDR4) - verify ball map |
| Brand | Micron Technology | Micron Technology | Micron Technology | Nanya Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 16 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 1G x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Principaux différenciateurs
- Full 8Gbit density at DDR4-3200 class speed (vs MT40A256M16LY-062E)
- Lower cost per gigabit than the 16Gbit option (vs MT40A1G16KH-062E)
- Single-source Micron die vs multi-source x16 DDR4 (vs NT5AD512M16C4-JRU)
Notes de conception
Route the DDR4 x16 data group (DQ0-DQ15, DQS pair, DM) as matched-length nets with controlled impedance, typically 40-50 ohm single-ended. For a single-device point-to-point topology, per-byte length matching of DQS to its DQ byte is the dominant constraint; keep address/command nets matched to the clock. Refer to Micron's DDR4 layout application notes and your SoC vendor's memory design guide for the exact skew and length rules before releasing the PCB.
Provide VDD and VDDQ at 1.2V from a DDR4-capable PMIC, a VTT termination rail at 0.6V capable of bidirectional current (source and sink), and a VTTREF tracking reference at 0.6V for the controller. Decouple each power ball of the 96-FBGA with at least one 0.1 uF ceramic plus bulk capacitance near the device. Omitting the VTT rail or undersizing its regulator is a common cause of DDR4 marginal timing failures at DDR4-3200 class rates.
Verify the AAT:E ordering-code meaning (temperature/package option) directly in the Micron ordering information table before production, and confirm the exact speed bin timing tables apply to your controller calibration settings. DRAM is a frequent counterfeit target: source only from authorized distributors such as DigiKey, Mouser, Newark, or LCSC. When substituting cross-brand parts (Nanya, Samsung), re-run memory controller calibration at bring-up rather than assuming identical timing parameters.
Informations de conformité
RoHS compliance per distributor listings for Micron DDR4 SDRAM. AEC-Q100 qualification not applicable to this standard commercial grade part; Micron offers separate automotive DDR4 variants. Exact REACH/halogen status should be confirmed on the Micron compliance portal.
