1EDN7116GXTMA1 vs 2EDN7534RXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7116GXTMA1 dari Infineon dan 2EDN7534RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7116GXTMA1 2EDN7534RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V 4.5 V to 20 V
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Rentang Suhu Kerja -40 °C to +125 °C —
Paket PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-TSSOP-8
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL3 1 (unlimited)
Status RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Number of Channels — 2
Peak Output Current (source/sink) — 5 A / 5 A
Propagation Delay (typ) — 19 ns
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V (absolute max)
Konfigurasi Output — Non-inverting
Output Resistance (Ron) — <1 ohm (typ)
Under-Voltage Lockout (UVLO) — Yes
Suhu Kerja — -40C to +125C
Lead-Free — Yes

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