1EDN7116GXTMA1 vs 2EDN7534RXTMA1 比較

詳細並排比較 1EDN7116GXTMA1 由 Infineon 與 2EDN7534RXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDN7116GXTMA1 2EDN7534RXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V 4.5 V to 20 V
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
工作溫度範圍 -40 °C to +125 °C —
封裝 PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-TSSOP-8
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL3 1 (unlimited)
RoHS 狀態 Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Number of Channels — 2
Peak Output Current (source/sink) — 5 A / 5 A
Propagation Delay (typ) — 19 ns
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V (absolute max)
輸出配置 — Non-inverting
Output Resistance (Ron) — <1 ohm (typ)
Under-Voltage Lockout (UVLO) — Yes
工作溫度 — -40C to +125C
Lead-Free — Yes

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