1EDN7116GXTMA1 vs 2EDN7534RXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7116GXTMA1 sa pamamagitan ng Infineon at 2EDN7534RXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7116GXTMA1 2EDN7534RXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V 4.5 V to 20 V
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Hanay ng Temperature na Operasyon -40 °C to +125 °C —
Packhaging PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-TSSOP-8
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL3 1 (unlimited)
Tindminan RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Number of Channels — 2
Peak Output Current (source/sink) — 5 A / 5 A
Propagation Delay (typ) — 19 ns
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V (absolute max)
Output Kumpigurasyon — Non-inverting
Output Resistance (Ron) — <1 ohm (typ)
Under-Voltage Lockout (UVLO) — Yes
Temperature na Operasyon — -40C to +125C
Lead-Free — Yes

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