2ED2304S06FXUMA1 vs 2ED2304S06F Perbandingan

Perbandingan bersamaan detil 2ED2304S06FXUMA1 dari Infineon dan 2ED2304S06F dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2304S06FXUMA1 2ED2304S06F
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI Infineon thin-film SOI (Silicon-On-Insulator)
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A 0.36 A
Sink Current (typ.) 0.7 A 0.7 A
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) —
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) —
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
Rentang Suhu Kerja -40C to +125C —
Paket PG-DSO-8-910 (DSO-8) PG-DSO-8-910 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 2 —
Status RoHS Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Topologi — High-side + Low-side, half-bridge
Maximum Blocking Voltage (High-Side) — 650 V
Integrated Bootstrap Diode — Yes
Logic Input Compatibility — 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down)
Input Pins — LIN (low-side in), HIN (high-side in)
Shoot-Through Protection — Built-in interlock logic
Jumlah Pin — 8
Target Power Devices — IGBTs and power MOSFETs
Suhu Kerja — [DATA_NEEDED: operating temperature range]

Spek dan Sumber

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