2ED2304S06FXUMA1 vs 2ED2304S06F 比較

詳細並排比較 2ED2304S06FXUMA1 由 Infineon 與 2ED2304S06F 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2304S06FXUMA1 2ED2304S06F
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI Infineon thin-film SOI (Silicon-On-Insulator)
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A 0.36 A
Sink Current (typ.) 0.7 A 0.7 A
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) —
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) —
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
工作溫度範圍 -40C to +125C —
封裝 PG-DSO-8-910 (DSO-8) PG-DSO-8-910 (DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 —
RoHS 狀態 Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
拓撲 — High-side + Low-side, half-bridge
Maximum Blocking Voltage (High-Side) — 650 V
Integrated Bootstrap Diode — Yes
Logic Input Compatibility — 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down)
Input Pins — LIN (low-side in), HIN (high-side in)
Shoot-Through Protection — Built-in interlock logic
腳位數 — 8
Target Power Devices — IGBTs and power MOSFETs
工作溫度 — [DATA_NEEDED: operating temperature range]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價