H5AN8G6NAFR-UHC vs K4A8G085WC-BCTD Perbandingan
Perbandingan bersamaan detil H5AN8G6NAFR-UHC dari SK hynix dan K4A8G085WC-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Waktu Beli TerakhirPerbandingan Spesifikasi
| Parameter Umum | H5AN8G6NAFR-UHC | K4A8G085WC-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Waktu Pembelian Terakhir |
| Tipe Memori | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | 1G x 8 |
| Tegangan Pemuat | 1.2 V | — |
| Laju Data | 2400 MT/s | 2666 Mbps (PC4-2133) |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Paket | 96-ball FBGA (TFBGA) | 78-ball FBGA (78FBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | 0C to +95C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | Yes |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Tipe Antarmuka | — | Synchronous, parallel |