H5AN8G6NAFR-UHC vs K4A8G085WC-BCTD 比較
詳細並排比較 H5AN8G6NAFR-UHC 由 SK hynix 與 K4A8G085WC-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最後購買機會規格比較
| 參數 | H5AN8G6NAFR-UHC | K4A8G085WC-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 最後購買 |
| 記憶體類型 | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| 組織 | 512M x 16 | 1G x 8 |
| 供應電壓 | 1.2 V | — |
| 資料速率 | 2400 MT/s | 2666 Mbps (PC4-2133) |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| 封裝 | 96-ball FBGA (TFBGA) | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +85C | 0C to +95C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | Yes |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| 介面類型 | — | Synchronous, parallel |