IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 Perbandingan

Perbandingan bersamaan detil IPB180P04P4L02ATMA2 dari Infineon dan IPD50P04P413ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB180P04P4L02ATMA2 IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-P2 —
Tipe Transistor P-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V -40 V
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Tc 150 W —
On-State Resistance RDS(on) max 2.4 mOhm at VGS = -10 V (per Infineon product page) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Rentang Suhu Kerja -55 C to +175 C (junction) -55 °C to +175 °C
Paket PG-TO263-7-3 (D2PAK-6, 7-pin) PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 7 (6 + tab) —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Level MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant (per Infineon product page) Compliant
Tab Connection Drain —
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs

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