IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB180P04P4L02ATMA2 sa pamamagitan ng Infineon at IPD50P04P413ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ NakahandaInfineon
IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
IPD50P04P413ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB180P04P4L02ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-P2 | — |
| Uri ng Transistor | P-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) | -55 °C to +175 °C |
| Packhaging | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-313 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 7 (6 + tab) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Tindminan RoHS | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | — |
| Polarity / Device Type | — | P-Channel MOSFET |
| Technology | — | OptiMOS-P2 (Trench) |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |