IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB180P04P4L02ATMA2 disebabkan oleh Infineon dan IPD50P04P413ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB180P04P4L02ATMA2 IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-P2 —
Jenis Transistor P-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V -40 V
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Tc 150 W —
On-State Resistance RDS(on) max 2.4 mOhm at VGS = -10 V (per Infineon product page) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Gambaran Suhu Operasi -55 C to +175 C (junction) -55 °C to +175 °C
Kemasan PG-TO263-7-3 (D2PAK-6, 7-pin) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 7 (6 + tab) —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Aras MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant (per Infineon product page) Compliant
Tab Connection Drain —
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs

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